Electrostatic discharge protection structure and method of forming the same
A technology of electrostatic discharge protection and conductive structure, which is applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of unstable performance and achieve the effect of performance improvement
Active Publication Date: 2020-03-10
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, as semiconductor devices are further reduced in size, performance remains unstable even when FinFETs are used in ESD protection circuits
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0035] As mentioned in the background art, as the size of semiconductor devices is further reduced, when fin field effect transistors are introduced as bipolar junction transistors in electrostatic discharge protection circuits, the performance of fin field effect transistors is still poor, and the reliability is relatively low. Difference.
[0036] Please refer to image 3 , image 3 It is a schematic cross-sectional structure diagram of an electrostatic discharge protection structure according to an embodiment of the present invention, including: a substrate 100 having a first region 110, a second region 120 adjacent to the first region 110, and a second region 120 adjacent to the second region 120 The adjacent third area 130; the first fin 111 located on the surface of the base 100 in the first area 110; the second fin 121 located on the surface of the base 100 in the second area 120; the third fin located on the surface of the base 100 in the third area 130 portion 131; ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses an electrostatic discharge protection structure and a formation method thereof. The electrostatic discharge protection structure comprises a substrate, first well regions, second well regions, a first doping region, a second doping region and a third doping region. The substrate comprises a first region, a second region, and a third region. Fin parts and separation layers are arranged on surfaces of the first region, the second region and the third region of the substrate. The separation layers cover parts of side wall surfaces of the fin parts. The first well regions are arranged in the substrate and the fin parts in the first region and the second region. The second well regions are arranged in the substrate and the fin parts of the third regions. The first doping region is arranged in the pin part in the first region and is provided with first type ions. The second doping region is arranged in the fin part of the second region and is provided with second type ions. The third doping region is arranged in the fin part in the third region and provided with first type ions. The second well regions are arranged in the substrate and fin parts of the third region. The first doping region and the second doping region are connected with first bias voltage. The third doping region is connected with second bias voltage. The performance of the electrostatic discharge protection structure is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an electrostatic discharge protection structure and a forming method thereof. Background technique [0002] As semiconductor chips are used more and more widely, there are more and more factors that cause semiconductor chips to be damaged by static electricity. In existing chip designs, electrostatic discharge (ESD, Electrostatic Discharge) protection circuits are often used to reduce chip damage. The design and application of existing electrostatic discharge protection circuits include: gate grounded N-type field effect transistor (Gate Grounded NMOS, GGNMOS for short) protection circuit, silicon controlled rectifier (SCR for short) protection circuit, lateral diffusion field effect Transistor (Laterally Diffused MOS, LDMOS for short) protection circuit, Bipolar Junction Transistor (Bipolar Junction Transistor, BJT for short) protection circuit, etc. [000...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP