Unlock instant, AI-driven research and patent intelligence for your innovation.

Magneto-impedance sensing device method and manufacturing method thereof

The technology of a sensing element and a manufacturing method is applied in the directions of inductance measurement, magnetic sensor element measuring geometric arrangement, electromagnetic device manufacturing/processing, etc., and can solve the problems that hinder the improvement of the sensitivity of the electromagnetic impedance sensing element and the electromagnetic impedance sensing Difficult to miniaturize the key dimensions of components, complex and time-consuming manufacturing process, etc., to achieve the effect of shortening the production time, improving the precision of the manufacturing process, and reducing the difficulty of the manufacturing process

Active Publication Date: 2017-03-22
PROLIFIC TECH INC
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when forming the sensing coil circuit, the formation steps of each patterned conductive layer and patterned insulating layer must be aligned with the magnetic wires, and the manufacturing process is complicated and time-consuming
In addition, the magnetic wire is not easy to fix, and the height difference between the magnetic wire and the ceramic substrate will cause uneven coating of the photoresist used to pattern the conductive layer and insulating layer, which is prone to the problem of out-of-focus exposure and development , so that the yield rate is not easy to improve
In addition, since the conductive layer and the insulating layer will fluctuate with the shape of the magnetic wire, it is not conducive to the subsequent electrode pad (Pad) production, making it more difficult to further miniaturize the critical dimensions of the electromagnetic impedance sensing element, so that the number of coils cannot be reduced. increase, which hinders the improvement of the sensitivity of the electromagnetic impedance sensing element

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magneto-impedance sensing device method and manufacturing method thereof
  • Magneto-impedance sensing device method and manufacturing method thereof
  • Magneto-impedance sensing device method and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] The invention provides an electromagnetic impedance sensing element and a manufacturing method thereof. In order to make the above-mentioned embodiments and other objectives, features and advantages of the present invention more comprehensible, several preferred embodiments are specifically cited below and described in detail with the accompanying drawings. However, it must be noted that these specific implementation cases and methods are not intended to limit the present invention. The invention can still be practiced with other features, means of components and embodiments. The preferred embodiments are presented only to illustrate the technical features of the present invention, not to limit the claims of the present invention. Those with ordinary knowledge in this technical field will be able to make equivalent modifications and changes according to the descriptions in the following specification without departing from the spirit of the present invention. In diffe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An electromagnetic impedance sensing device includes a substrate, a first patterned conductive layer, a second patterned conductive layer, a magneto-conductive wire and an encapsulation layer. The substrate has a surface and a trench extending into thereof. The first patterned conductive layer is formed on the surface, as well as a bottom and sidewalls of the trench. The magneto-conductive wire is disposed in the trench. The second patterned conductive layer extending across the trench and electrically in contact with the first patterned conductive layer is formed on the first patterned conductive layer to make the magneto-conductive wire sandwiched between the first and the second patterned conductive layers. The magneto-conductive wire is encapsulated by the encapsulation layer to make the magneto-conductive wire electrically isolated from the first and second patterned conductive layers. At least one coil circuit surrounding the magneto-conductive wire is formed by the first and second patterned conductive layers.

Description

technical field [0001] The invention relates to a semiconductor element and its manufacturing method, and in particular to an electromagnetic impedance sensing element and its manufacturing method. Background technique [0002] Due to the emergence of consumer electronic products such as mobile phones and electronic compasses, coupled with traditional products such as motors and brakes, the demand for electromagnetic impedance sensing devices is increasing. [0003] At present, most electromagnetic impedance sensing elements are based on ceramic substrates. The magnetic wires are fixed on the ceramic substrate through the interlaced stacking of multi-layer patterned conductive layers, patterned insulating layers and magnetic wires, and the magnetic wires are the center. , forming an induction coil circuit surrounding the magnetic wire. However, when forming the sensing coil circuit, every step of forming the patterned conductive layer and the patterned insulating layer must...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12H10N50/10H10N50/01
CPCH10N50/10H10N50/01G01R33/0005G01R33/063G01R33/0052G01R27/2611
Inventor 李泓达黎柏夆
Owner PROLIFIC TECH INC