The invention provides a
plasma current monitoring device for a
semiconductor plasma etching cavity, and relates to the field of monitoring of a
semiconductor plasma etching process. The
plasma flow in the cavity can be measured in real time under the condition that the environment of the cavity is not interfered. The device is composed of a main body substrate, an upper surface sensing layer, a lower surface integration layer and an
electromagnetic shielding film covering the surface of the substrate. The upper surface sensing layer comprises a non-contact
magneto-impedance effect
current sensor network which is arranged in an
annular array; the lower surface integration layer comprises a master control acquisition
microcontroller circuit, a power supply circuit, a thin film battery, a charging circuit, a real-time communication circuit and a storage module. The device adopts a structure, a size and an impedance design similar to those of an actual process
wafer, can simulate a real state of the
wafer in a
plasma etching process, and acquires a
magnetic signal of the substrate in real time in an
etching process. The collected magnetic signals are processed and stored under the control of the
microcontroller, and are transmitted to an external reading device through the real-time communication circuit. The method has wide applicability, can be compatible with various
semiconductor process equipment, and provides a reliable technical means for real-time monitoring and optimization of the
plasma etching process.