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Envelope method for improving breakdown voltages of tantalum capacitor

A technology of breakdown voltage and tantalum capacitors, applied in the direction of capacitor electrodes, capacitor parts, etc., can solve problems such as impossible to reach 100%, affecting the leakage current and reliability of capacitors, and unsatisfactory formation effect, achieving easy control, Improve the breakdown voltage and improve the effect of forming voltage

Active Publication Date: 2017-03-29
CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially for high-voltage tantalum capacitors with a rated voltage greater than or equal to 63V, the supplementary formation voltage does not exceed 50% of the formation voltage, resulting in unsatisfactory supplementary formation effects and affecting the leakage current and reliability of the capacitor
[0005] In the existing tantalum capacitor cathode preparation process, no matter how to Mn 2 (NO) 3 Doping in the solution, how to change the thermal decomposition parameter conditions, Mn 2 (NO) 3 Thermal decomposition of solution to generate MnO 2 The conversion rate is impossible to reach 100%, there are more or less MnO 2 other manganese salt residual impurities

Method used

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  • Envelope method for improving breakdown voltages of tantalum capacitor
  • Envelope method for improving breakdown voltages of tantalum capacitor

Examples

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Embodiment 1

[0023] A coating method for improving the breakdown voltage of tantalum capacitors, taking the CAK45 chip tantalum capacitor 75V4.7μF designed with 3500μF·V / g specific volume tantalum powder as an example, it includes the following steps:

[0024] (1) Take the tantalum core that has been thermally decomposed and ready to be repaired, and immerse it in a sodium hydroxide solution with a concentration of 5% for 20 minutes, and the tantalum block is immersed in such a depth that it is completely submerged under the liquid surface;

[0025] (2) Immerse the tantalum core impregnated with sodium hydroxide solution in deionized water at a temperature of 80-100°C for 40 minutes, and perform high-temperature cleaning on the tantalum core. The immersion depth of the tantalum block is completely submerged under the water surface;

[0026] (3) Put the tantalum core in an oven at 125°C for 15 minutes;

[0027] (4) Immerse the tantalum core in the nitric acid aqueous solution with a concent...

Embodiment 2

[0031] A coating method for improving the breakdown voltage of tantalum capacitors, taking the CAK45 chip tantalum capacitor 100V10μF designed with 2500μF·V / g specific volume tantalum powder as an example, it includes the following steps:

[0032] (1) Take the tantalum core that has been thermally decomposed and is to be repaired, and immerse it in an ammonia solution with a concentration of 20% for 10 minutes, and the tantalum block is immersed in such a depth that it is completely submerged under the liquid surface;

[0033] (2) Immerse the tantalum core impregnated with the ammonia solution in deionized water at a temperature of 80-100°C for 90 minutes, and perform high-temperature cleaning on the tantalum core. The immersion depth of the tantalum block is completely submerged under the water surface;

[0034] (3) Put the tantalum core in an oven at 150°C for 10 minutes;

[0035] (4) Immerse the tantalum core in the acetic acid aqueous solution with a concentration of 0.05‰...

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Abstract

The invention provides an envelope method for improving breakdown voltages of a tantalum capacitor. The method comprises the following steps: immersing a tantalum fuse to be formed which is already subjected to thermal decomposition into deionized water with a temperature of 80 to 100DEG C for boiling washing; placing the tantalum fuse in a baking oven at a temperature of 125 to 150 DEG C for drying; immersing the tantalum fuse into an acid solution with a concentration of 0.001 to 0.01% in an electrolytic tank, and applying voltages to form the tantalum fuse; and placing the tantalum fuse after formation ends into the baking oven at the temperature of 125 to 150 DEG C for drying. Before the tantalum fuse is formed, the tantalum fuse is cleaned by use of a dipping alkaline solution method and a high-temperature boiling washing method, soluble Mn<2+> which is not thoroughly decomposed in the tantalum fuse is removed, and the breakdown voltages of the tantalum fuse are improved; and formation voltages are increased, MnO2 at a defect position generated due to thermal decomposition of a Ta2O5 medium membrane can be fully converted into Mn2O3 higher than resistance, leakage currents of a product are reduced, and the reliability of the capacitor is improved.

Description

technical field [0001] The invention relates to a coating method for increasing the breakdown voltage of a tantalum capacitor, belonging to the technical field of tantalum capacitor preparation. Background technique [0002] Tantalum capacitors have many excellent properties such as small size, large capacitance, small leakage current, long life, and good storage stability, and are widely used in various military applications such as aerospace, aerospace, aviation, weapons, ships, communications, instrumentation, etc. In the field of civilian electronics. In recent years, with the continuous development of technology in the microelectronics industry, the volume required for electronic complete machines has become smaller and smaller. At present, tantalum capacitors are developing in the direction of small size and high reliability. [0003] The high reliability of tantalum capacitors is not only related to anode manufacturing and dielectric film manufacturing, but also clo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/04
Inventor 赵泽英曹俭兵孙熙荣
Owner CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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