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A kind of semiconductor green fluorescent powder and preparation method thereof

A green fluorescent powder and semiconductor technology, applied in chemical instruments and methods, luminescent materials, inorganic chemistry, etc., can solve the problems of high price, toxicity of lemon salt, etc., and achieve the effect of wide excitation bandwidth and mild preparation conditions

Active Publication Date: 2018-12-28
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Traditional phosphor materials mostly rely on activators or co-activators to emit light, and activators usually use rare earth elements, which are expensive and their oxides, chlorides, and citric salts are toxic. In addition, the preparation of phosphor materials often requires Harsh conditions such as high temperature reducing atmosphere

Method used

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  • A kind of semiconductor green fluorescent powder and preparation method thereof
  • A kind of semiconductor green fluorescent powder and preparation method thereof
  • A kind of semiconductor green fluorescent powder and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] According to (Bi 0.995 Y 0.005 ) 2 ZnO(BO 3 ) 2 Weigh Bi(NO 3 ) 3 , Y(NO 3 ) 3 , ZnO and H 3 BO 3 , and the molar ratio between them is 1.99:0.01:1:2. After fully grinding and mixing, place in a crucible, then bake in a high-temperature furnace at 620°C for 6 hours, and then cool to room temperature to obtain a semiconductor green phosphor.

[0022] from figure 1 It can be seen from the figure that the excitation spectrum of the phosphor powder in this embodiment is a broad spectrum, covering the ultraviolet, purple and blue light regions, the excitation peak is located near 410nm, and the spectral peak is high, indicating that the phosphor powder of this embodiment can be used by ultraviolet and purple light chips. Effective stimulation. When the excitation wavelength of the emission spectrum is 410nm, from figure 2 It can be seen from the figure that the emission of the phosphor powder in this embodiment is broadband green light emission, and the emission...

Embodiment 2

[0024] According to (Bi 0.95 Y 0.05 ) 2 ZnO(BO 3 ) 2 Weigh Bi(NO 3 ) 3 , Y(NO 3 ) 3 , ZnO and H 3 BO 3 , and the molar ratio between them is 1.9:0.1:1:2. After fully grinding and mixing, place in a crucible, then bake in a high-temperature furnace at 650°C for 6 hours, and then cool to room temperature to obtain a semiconductor green phosphor.

[0025] The excitation spectrum of the phosphor in this embodiment is a broad spectrum, covering the ultraviolet, violet and blue light regions, the excitation peak is located near 410nm, and the spectral peak is high, indicating that the phosphor in this embodiment can be effectively excited by the ultraviolet and violet light chips. When the excitation wavelength of the emission spectrum is 410nm, the emission of the phosphor powder in this embodiment is broadband green light emission, and the emission peak is located near 518nm, indicating that the phosphor powder in this embodiment is suitable for green phosphor excited by ...

Embodiment 3

[0027] According to (Bi 0.75 Y 0.25 ) 2 ZnO(BO 3 ) 2 Weigh Bi(NO 3 ) 3 , Y(NO 3 ) 3 , ZnO and H 3 BO 3 , the molar ratio between them is 1.5:0.5:1:2, after fully grinding and mixing, place in a crucible, then bake in a high-temperature furnace at 650°C for 5 hours, and then cool to room temperature to obtain a semiconductor green phosphor.

[0028] The excitation spectrum of the phosphor in this embodiment is a broad spectrum, covering the ultraviolet, violet and blue light regions, the excitation peak is located near 410nm, and the spectral peak is high, indicating that the phosphor in this embodiment can be effectively excited by the ultraviolet and violet light chips. When the excitation wavelength of the emission spectrum is 410nm, the emission of the phosphor powder in this embodiment is broadband green light emission, and the emission peak is located near 515nm, indicating that the phosphor powder of this embodiment is suitable for green phosphor excited by ultr...

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Abstract

The invention relates to the technical field of luminescent materials and discloses semiconductor green fluorescent powder. The fluorescent powder has the following chemical expression: (Bi1-xYx)2ZnO(BO3)2, wherein x is larger than 0 but smaller than or equal to 1. The fluorescent powder has the beneficial effects that the fluorescent powder does not contain rare soil elements with the price being relatively high, preparation conditions are mild, high temperature and a reducing atmosphere are not needed, and green emitting can be achieved; the obtained green fluorescent powder has a wide excitation bandwidth, covers an ultraviolet range, a purple light range and a blue range and can be effectively excited, the excitation peak is located near 410 nanometers, and the excitation peak and the emitting peak of an ultraviolet chip are overlapped well.

Description

technical field [0001] The invention relates to the technical field of luminescent materials, in particular to a semiconductor green fluorescent powder and a preparation method thereof. Background technique [0002] White LED is a solid-state semiconductor device that converts electrical energy into white light, also known as semiconductor lighting. It has many advantages such as high efficiency, small size, long life, safety, low voltage, energy saving, and environmental protection. , Fluorescent lamps, and high-pressure gas discharge lamps are the fourth generation of lighting sources, which will be the mainstream products in the future lighting market. [0003] At present, there are various white light LED preparation methods, among which the combination of blue LED chip and yellow fluorescent material, combination of blue LED chip and red and green fluorescent material, and combination of purple LED chip and trichromatic fluorescent material are the three methods with lo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/78C01B35/12
CPCC01B35/128C09K11/7712
Inventor 余华季振国陈大钦陈雷锋钟家松赵红挺
Owner HANGZHOU DIANZI UNIV
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