a sensitive amplifier

Abstract

The invention discloses a sense amplifier. The sense amplifier comprises a precharge circuit, a reference current generation circuit, a current mirror circuit, a clamping circuit and a comparison circuit. The current mirror circuit is directly connected with a column decoder, therefore, compared with the prior art that a current mirror circuit and a column decoder need to be connected through a transistor, cascading of transistors in the sense amplifier is omitted, the supply voltage of the sense amplifier only needs to be higher than the drain-source voltage of the current mirror circuit and the array output end voltage of the column decoder, and consequently the operating voltage range of the sense amplifier is expanded.

Description

[0001] This application claims the priority of the Chinese patent application with the application number 201611177918.9 submitted to the China Patent Office on December 19, 2016, and the title of the invention is "A Sensitive Amplifier", the entire content of which is incorporated in this application. technical field [0002] The invention relates to the technical field of integrated circuits, and more specifically, relates to a sensitive amplifier. Background technique [0003] With the development of science and technology, the status of embedded semiconductor memory such as Flash memory is becoming more and more important. In the peripheral circuit of embedded semiconductor memory, the design structure of the sense amplifier array directly restricts the storage of data stored in the embedded semiconductor memory. Take time. Generally, the sense amplifier array includes a plurality of identical sense amplifiers, which can simultaneously perform read operations on a plural...

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Problems solved by technology

[0005] from figure 1 It can be seen from the figure that the comparison point C of the traditional sense amplifier is at the drain end of the transistor M9, and the comparison point D is at the drain end of the transistor M10. The array output terminal voltage of the column decoder and the drain-source voltage V of the transistor M9 ds(M9) The sum and the array output terminal of the column decoder (that is, point B) voltage V B and the drain-source voltage of transistor M10 V ds(M10) and so that the power supply voltage VDD of the sense amplifier is at least higher than the voltage V of the array output terminal (namely point B) of the column decoder B , The drain-source voltage V of transistor M10 ds(M10) and the drain-source voltage V of transistor M3 in the current mirror circuit ds(M3) The sum, that is, the supply voltage of the sense amplifier VDD>V B +V ds(M10) +V ds(M3) , which in turn causes the operating voltage range of the sense amplifier to be limited by VB+V ds(M10) +V ds(M3) The limitation of the sum of the sense amplifier makes the operating voltage range limited

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