Unlock instant, AI-driven research and patent intelligence for your innovation.

Evaporation source for vacuum evaporation

An evaporation source and vacuum technology, which is applied in vacuum evaporation plating, sputtering plating, gaseous chemical plating, etc., can solve the problems of low evaporation rate, slow evaporation speed, and difficulty in ensuring uniformity of film formation, and achieve The effect of saving evaporation materials and increasing evaporation speed

Active Publication Date: 2019-12-17
TSINGHUA UNIV +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially when there are two or more evaporation sources, it is more difficult to control the evaporation rate of each evaporation source, and it is difficult to form a predetermined ratio of mixed evaporation material gas
The larger the size of the coating, the more difficult it is to ensure the uniformity of the film formation, and because it is difficult to control the diffusion direction of the gaseous evaporation material atoms, most of the evaporation materials cannot be attached to the surface of the substrate to be coated, resulting in a low evaporation rate and Problems such as slow evaporation speed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Evaporation source for vacuum evaporation
  • Evaporation source for vacuum evaporation
  • Evaporation source for vacuum evaporation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The evaporation source for vacuum evaporation of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0026] see figure 1 , the first embodiment of the present invention provides a vacuum evaporation device 10, comprising an evaporation source for vacuum evaporation (hereinafter referred to as evaporation source) 100, a substrate to be plated 200, a vacuum chamber 300 and an electromagnetic wave signal input device 400, the evaporation source 100 and The substrate 200 to be plated is disposed in the vacuum chamber 300 . The substrate to be plated 200 is opposite to the evaporation source 100 and arranged at intervals, and the interval is preferably 1 micron to 10 mm. The electromagnetic wave signal input device 400 inputs an electromagnetic wave signal to the evaporation source 100 . In this embodiment, the electromagnetic wave signal input device 400 is also disposed in the vacuum chamber 300 .

[0027] see...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides an evaporation source for vacuum evaporation, which includes an evaporation material and a carbon nanotube film structure. The carbon nanotube film structure is a carrier. The evaporation material is arranged on the surface of the carbon nanotube film structure. Membrane structure bearing.

Description

technical field [0001] The invention relates to the technical field of vacuum evaporation, in particular to an evaporation source for vacuum evaporation. Background technique [0002] Vacuum evaporation is a process in which the evaporation source is heated in a vacuum to vaporize the evaporation material and deposit a film on the surface of the substrate to be coated. In order to form a uniform film, it is necessary to form a uniform vapor deposition material around the substrate to be plated. In the prior art (such as Chinese patent application CN1970826A), it is usually necessary to set up a complicated flow guide device to uniformly transport the gaseous evaporation material to the surface of the substrate to be plated. Especially when there are two or more evaporation sources, it is more difficult to control the evaporation rate of each evaporation source, and it is difficult to form a predetermined ratio of mixed evaporation material gas. The larger the size of the c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/24
CPCC23C14/06C23C14/243C23C16/30C23C16/4485
Inventor 魏洋魏浩明姜开利范守善
Owner TSINGHUA UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com