Unlock instant, AI-driven research and patent intelligence for your innovation.

Memory interface circuit and control method thereof

A technology of memory interface and control method, which is applied in the direction of static memory, digital memory information, logic circuit, etc.

Inactive Publication Date: 2017-08-08
MEDIATEK INC
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the on-chip transmitter suffers from some drivability issues when the supply voltage varies

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory interface circuit and control method thereof
  • Memory interface circuit and control method thereof
  • Memory interface circuit and control method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The following description is a preferred embodiment of the present invention, which is only used to illustrate the technical features of the present invention, but not to limit the scope of the present invention. While certain terms are used throughout the specification and claims to refer to specific elements, those skilled in the art should understand that manufacturers may use different names for the same element. Therefore, the specification and claims do not use the difference in name as the way to distinguish components, but use the difference in function of the components as the basis for the difference. The terms "element", "system" and "apparatus" used in the present invention may be a computer-related entity, where the computer may be hardware, software, or a combination of hardware and software. The terms "comprising" and "including" mentioned in the following description and claims are open terms, so they should be interpreted as "including, but not limited ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a memory interface circuit. The memory interface circuit includes a first variable impedance circuit coupled between a first supply voltage and a pad, and a second variable impedance circuit coupled between a second supply voltage and the pad; wherein when the first supply voltage changes, at least one of the first variable impedance circuit and the second variable impedance circuit is controlled to have different setting in response to the changing of the first supply voltage. Correspondingly, the invention also provides a control method of the memory interface circuit. The driving ability can be controlled according to change of the first supply voltage.

Description

technical field [0001] The present invention relates to a memory scheme, and more particularly, to a memory interface circuit capable of controlling drive capability and a control method thereof. Background technique [0002] Recently, in order to reduce the power consumption of the chip, the supply voltage of the chip is controlled to have different levels according to the load of the chip. However, the on-chip transmitter suffers from some drive capability issues when the supply voltage varies. Therefore, how to control the interface circuit to avoid the driving capability problem is an important issue. Contents of the invention [0003] In view of this, one object of the present invention is to provide a memory interface circuit and a control method of the memory interface circuit to solve the above problems. [0004] According to a first aspect of the present invention, the present invention provides a memory interface circuit comprising a first variable impedance ci...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/10
CPCG11C7/1003G11C7/1048G11C5/04G11C7/1057G11C7/1084H03K19/0005H03K19/017545H03K19/01825H03K19/018557G06F3/0625G06F3/0659G06F3/0683G11C11/4074
Inventor 陈尚斌詹佳谕谢博伟
Owner MEDIATEK INC