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Lithography machine illumination uniformity correction device and correction method

A technology of uniformity correction and lithography machine, which is applied in photoplate-making process exposure devices, optomechanical equipment, microlithography exposure equipment, etc. The effect of high correction capability and high correction resolution

Active Publication Date: 2018-07-13
BEIJING GUOWANG OPTICAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The prior art [5] (US7864297B2) describes a uniformity correction device for a flexible finger array. In this device, each correction unit can not only run in a straight line along the Y (scanning direction), but the flexible parts can also make the correction unit Rotate around the Z axis, the correction resolution is improved, but the movement of the correction unit in the Y direction is coupled with the rotation in the Z direction, thus increasing the complexity of the finger positioning algorithm
And the curve formed by the top of the correction unit in this device is still discontinuous, so there is still room for improvement in the correction resolution

Method used

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  • Lithography machine illumination uniformity correction device and correction method
  • Lithography machine illumination uniformity correction device and correction method
  • Lithography machine illumination uniformity correction device and correction method

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Embodiment Construction

[0033] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0034] Such as figure 1 Shown is a schematic diagram of the illumination uniformity correction device of the present invention applied to a photolithography machine. The optical system 100 of a typical projection exposure lithography machine includes an illumination system 110 , a mask plate 130 , a projection objective lens 140 , and a silicon wafer 150 . The illumination system 110 provides a uniform illumination field for the photolithography system, and the uniform illumination field generated by it is irradiated onto the mask plate 130 , and is imaged onto the silicon wafer 150 through the projection objective lens 140 for exposure. The uniformity correction device 120 is located between the illumination system 110 and the mask plate 130, the detector 160 is located near the silicon wafer 150, the data 165 obtained by the detec...

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Abstract

The invention relates to a lighting uniformity correction device and correction method of a photoetching machine. The correction device comprises a base, an upper correction module and a lower correction module, wherein the upper correction module and the lower correction module are arranged at two sides of an illumination light field in a scanning direction and are symmetrically arranged relative to a non-scanning direction of the illumination light field, and both of the upper correction module and the lower correction module are provided with a flexible thin plate, corresponding deflection deformation is obtained by controlling displacement of different points on a cross section of the flexible thin film, a part of illumination light is shielded by the flexible thin plate which moves along the scanning direction of the illumination light field to enter the illumination light field, so that the purpose of correcting the lighting uniformity is achieved. Since the profile of the flexible thin plate after deflection deformation is a continuous curve, the device has higher correction capability and correction resolution.

Description

technical field [0001] The invention relates to an illumination system of a lithography machine, in particular to an illumination uniformity correction device and a correction method for the illumination system of a lithography machine. Background technique [0002] In the lithography machine, the function of the illumination system is to adjust the beam emitted by the laser to provide a high-quality illumination field for the mask, so as to ensure the high-quality imaging of the mask pattern on the silicon wafer through the projection objective lens. A uniform illumination field can reduce the lithography process factor and improve the resolution of the entire lithography system. However, with the continuous development of lithography technology and the continuous reduction of feature size, the uniformity requirements of lithography for the illumination system are also increasing. For example, the uniformity of the illumination system in a 90nm lithography machine is requir...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/70075G03F7/70191
Inventor 程伟林张方杨宝喜黄惠杰
Owner BEIJING GUOWANG OPTICAL TECH CO LTD