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NAND FLASH array write failure processing method

A processing method and array technology, applied in the direction of electrical digital data processing, data processing input/output process, instruments, etc., can solve the problems of data inability to write, NANDFLASH storage bad blocks, etc., to ensure the complete effect

Inactive Publication Date: 2017-08-29
JINAN INSPUR HIGH TECH TECH DEV CO LTD
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Problems solved by technology

However, due to the characteristics of NAND FLASH, bad blocks often appear in NAND FLASH storage, resulting in data that cannot be written

Method used

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  • NAND FLASH array write failure processing method

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Embodiment Construction

[0015] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments. It should be noted that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0016] The method for processing the write failure of the NAND FLASH array is that when a write error occurs in the NAND FLASH array during the writing process, the address of a replaceable block is searched from the spare block RAM table, and the data is moved to a new replaceable block.

[0017] The processing method of the NAND FLASH array writing failure comprises the following steps:

[0018] (1) First, when a write error occurs in the NAND FLASH array, the Page counter pointer is initialized to 0, and the page address written to the NAND FLASH at the time of the current e...

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Abstract

The invention particularly relates to an NAND FLASH array write failure processing method. According to the NAND FLASH array write failure processing method, when write errors occur in the writing process of an NAND flash array, an address of one replaceable block is searched for in a standby block RAM table, and data is migrated into a new replacement block. By means of the NAND FLASH array write failure processing method, replacement and data migration of bad blocks of the NAND FLASH array can be achieved, and the integrity of the data is ensured.

Description

technical field [0001] The invention relates to the technical field of high-speed and large-capacity storage, in particular to a processing method for writing failure of a NAND FLASH array. Background technique [0002] As an emerging storage device, NAND FLASH has replaced NOR FLASH in many fields due to its large storage capacity and low cost. However, due to the characteristics of NAND FLASH, bad blocks often appear in NAND FLASH storage, resulting in data that cannot be written. [0003] Based on the above situation, the present invention proposes a processing method for NAND FLASH array writing failure. Contents of the invention [0004] In order to make up for the defects of the prior art, the present invention provides a simple and efficient processing method for NAND FLASH array write failure. [0005] The present invention is achieved through the following technical solutions: [0006] A kind of processing method of NAND FLASH array writing failure, it is chara...

Claims

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Application Information

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IPC IPC(8): G06F3/06
CPCG06F3/0619G06F3/0629G06F3/0638G06F3/064G06F3/0647G06F3/0688
Inventor 尹超赵鑫鑫李朋姜凯
Owner JINAN INSPUR HIGH TECH TECH DEV CO LTD