Solar battery module and method for producing same
A technology of solar cells and manufacturing methods, applied in circuits, electrical components, photovoltaic power generation, etc., which can solve the problems of low adhesion of wiring materials and achieve the effects of small contact resistance and excellent reliability
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Embodiment 1
[0090] (Fabrication of Heterojunction Solar Cells)
[0091] An n-type single crystal silicon wafer with a thickness of 200 μm and a texture formed on the front and back is introduced into a CVD device, and by plasma CVD, a film of i-type amorphous silicon is formed on the light-receiving surface with a film thickness of 5 nm. The thickness of the film is formed into a p-type amorphous silicon film. Next, an i-type amorphous silicon film was formed with a film thickness of 6 nm on the back side of the wafer, and an n-type amorphous silicon film was formed with a film thickness of 4 nm thereon. On each of the p-type amorphous silicon layer and the n-type amorphous silicon layer, indium tin oxide (ITO) was formed as a transparent conductive layer with a film thickness of 100 nm. As described above, the photoelectric conversion part of the heterojunction solar cell was fabricated.
[0092] Silver was formed as a base electrode layer with a film thickness of 100 nm by sputtering ...
Embodiment 2
[0102] (Fabrication of Heterojunction Solar Cells)
[0103] After producing a photoelectric conversion portion in the same manner as in Example 1, copper was formed as a base electrode layer with a film thickness of 100 nm by a sputtering method on the entire surface on the backside transparent conductive layer. A resist is applied and exposed thereon to form resist openings in a grid-like pattern composed of finger electrodes and bus bar electrodes. On the light-receiving side, Ag paste was screen-printed in the same manner as in Example 1 to form a silicon oxide layer and then annealed to form openings serving as starting points for electrolytic plating in the silicon oxide layer.
[0104] The above-mentioned substrate was put into an electrolytic copper plating bath, and electrolytic plating was performed in the same manner as in Example 1, and copper-plated electrodes having a thickness of about 10 μm were deposited on each of the light-receiving surface and the rear surfa...
Embodiment 3
[0108]A module was produced in the same manner as in Example 1 except that a non-crosslinked thermoplastic polyolefin resin film mainly composed of polyethylene was used as the light-receiving surface sealing material.
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