Unlock instant, AI-driven research and patent intelligence for your innovation.

Programmable gate array based on three-dimensional writable memory (3D-W)

A technology for writing memory and gate arrays, applied to logic circuits using basic logic circuit components, logic circuits using specific components, electrical components, etc., can solve problems such as limiting the application of programmable gate arrays

Active Publication Date: 2017-09-12
HANGZHOU HAICUN INFORMATION TECH
View PDF6 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Obviously, solidifying computing units will limit the further application of programmable gate arrays

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Programmable gate array based on three-dimensional writable memory (3D-W)
  • Programmable gate array based on three-dimensional writable memory (3D-W)
  • Programmable gate array based on three-dimensional writable memory (3D-W)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] figure 1 is a cross-sectional view of a three-dimensional writable memory (3D-W). 3D-W is a kind of three-dimensional memory (3D-M), and the stored information is entered by electrical programming. According to the number of times it can be programmed, 3D-W is divided into three-dimensional one-time programming memory (3D-OTP) and three-dimensional multiple programming memory (3D-MTP). Among them, 3D-OTP can be programmed once, and 3D-MTP can be programmed repeatedly. Common 3D-W includes 3D-XPoint (three-dimensional cross-point array memory), 3D-RRAM (three-dimensional impedance memory), 3-Dmemristor (three-dimensional resister), 3D-OTP (three-dimensional one-time programming memory), etc.

[0023] The 3D-W 10 includes a substrate circuit layer OK formed on a substrate 0 . The storage layer 16A is stacked on the substrate circuit OK, and the storage layer 16B is stacked on the storage layer 16A. The substrate circuit layer OK contains the peripheral circuitry of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a programmable gate array based on a three-dimensional writable memory (3D-W). The programmable gate array includes a programmable computing cell array, a programmable logical cell array and a plurality of programmable connections, wherein each programmable computing cell includes at least one 3D-W array, and the 3D-W array stores a look-up table (LUT) for mathematical functions.

Description

technical field [0001] The present invention relates to the field of integrated circuits, and more specifically, to programmable gate arrays. Background technique [0002] Programmable gate array is a semi-custom integrated circuit, which realizes customization of logic circuits through back-end process or on-site programming. US Patent 4,870,302 discloses a programmable gate array. It contains multiple programmable logic elements (configurable logic element, or configurable logic block) and programmable connections (configurable interconnect, or programmable interconnect). Among them, the programmable logic unit can selectively realize shift, logic not, AND (logic and), OR (logic and), NOR (and not), NAND (and not), XOR (exclusive or) under the control of the setting signal. ), + (arithmetic addition), - (arithmetic subtraction) and other functions; the programmable connection can selectively realize functions such as connection and disconnection between two interconnecti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/177
CPCH03K19/17728H03K19/17708
Inventor 张国飙
Owner HANGZHOU HAICUN INFORMATION TECH