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A Planar Torsion Microsensor for High Magnetic Field Measurement

A twisting micro sensor technology, applied in the direction of the magnitude/direction of the magnetic field, measuring devices, measuring magnetic variables, etc., can solve problems such as poor radiation resistance, reduced sensor quality factor, unsuitable for Tokamak high temperature, strong radiation environment, etc.

Active Publication Date: 2019-04-30
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, its temperature dependence is large, and its radiation resistance is poor. After radiation, the quality factor of the sensor will be reduced, and it is not suitable for the high temperature and strong radiation environment inside the tokamak.

Method used

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  • A Planar Torsion Microsensor for High Magnetic Field Measurement
  • A Planar Torsion Microsensor for High Magnetic Field Measurement
  • A Planar Torsion Microsensor for High Magnetic Field Measurement

Examples

Experimental program
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Effect test

Embodiment 1

[0050] A planar torsion microsensor for measuring a strong magnetic field includes a substrate, a sensor body and a cover that are sequentially connected.

[0051] The substrate is a single-sided polished wafer 5 with a thickness of 500 um, a cavity with a depth of 1.2 um is provided on the polished side, and a first silicon oxide layer 6 is provided on the entire polished surface with the cavity;

[0052] see figure 1 , the sensor body is prepared on the basis of SOI wafer 1, and the sensor body is divided into three parts: the coil electrode anchor area, the torsion plane, and the capacitive electrode anchor area; the length direction of the torsion plane is the X direction, the width direction is the Y direction, and the torsion plane The two sides of the middle part in the Y direction are respectively concave inward, the coil electrode anchor area is located outside one side of the Y direction in the middle of the torsion plane; the capacitive electrode anchor area is loca...

Embodiment 2

[0064] The steps to prepare the planar torsion microsensor for strong magnetic field measurement are as follows:

[0065] (1). On the side of the silicon material layer 2 of the SOI wafer 1 of the sensor body, use deep reactive ion etching technology to pattern-etch a cavity with a depth of 1um, and use lift-off technology to pattern-grow 400nm on the inner surface of the cavity respectively. The second silicon oxide layer 3 and the capacitor upper plate layer 4 . The material of the upper plate layer 4 of the capacitor is aluminum.

[0066] (2). On the single-sided polished wafer 5 of the substrate, a 1.2um deep cavity is etched using deep reactive ion etching technology, so that the single-sided polished wafer 5 has a "concave" shape, and after the cavity is etched A 400nm-thick first silicon oxide layer 6 is grown on the surface of the polished silicon material, and then an aluminum material is grown on the first silicon oxide layer 6 on the inner surface of the cavity as ...

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Abstract

The invention relates to a planar torsional micro sensor for measurement of a strong magnetic field in the X and Y directions. The sensor comprises a substrate, a sensor body and a cap connected successively, the sensor body is divided into a coil electrode anchor zone, a torsion plane and a capacitor electrode anchor zone, the coil electrode anchor zone and the capacitor electrode anchor zone are positioned outside two sides of the Y direction in the middle of the torsion plane respectively, the two sides of the Y directions in the middle of the torsion plane are recessed inwardly, and the substrate, the sensor body and the cap are bonded to form the planar torsional micro sensor whose internal is in vacuum. Thus, the magnitude of the magnetic field in the X and Y directions in the Tokamak strong magnetic environment can be measured, under the effect of a Lorentz force, a metal coil input with an AC signal drives the torsion plane to have a trend of torsion towards the bearing direction, the torsion plane vibrates mechanically in certain frequency, capacitance between the upper and lower pole plates is changed, and the magnitude of the measured magnetic field is calculated.

Description

technical field [0001] The invention belongs to the technical field of microsensors, and in particular relates to a structural design and a preparation process of a planar torsion microsensor (MEMS) for measuring strong magnetic fields in X and Y directions. Background technique [0002] With the rapid development of the world economy and the increase of the world's population, human beings' demand for energy is also increasing. The development and utilization of fusion energy is the most promising way to fundamentally solve human energy problems. Among them, the Tokamak device Magnetic confinement fusion research is currently one of the most likely ways to realize the application of fusion energy. The tokamak device is actually a complex high-temperature and strong-radiation electromagnetic system, which uses the magnetic fields generated by various magnet coils to weave into a "magnetic cage "Using the Larmor motion of charged particles in a magnetic field, the high-temper...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R33/028
CPCG01R33/0286
Inventor 许高斌王月媖陈兴马渊明李坤
Owner HEFEI UNIV OF TECH
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