Material composition and methods thereof

Abstract

Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a multi-metal complex including an extreme ultraviolet (EUV) absorption element and a bridging element. By way of example, the EUV absorption element includes a first metal type and the bridging element includes a second metal type. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.

Description

technical field [0001] Embodiments of the invention relate to material compositions and methods thereof. Background technique [0002] The electronics industry experiences an ever-increasing demand for smaller and faster electronic devices capable of supporting a greater number of increasingly complex and sophisticated functions at the same time. Accordingly, there is a continuing trend in the semiconductor industry to manufacture low cost, high performance and low power integrated circuits (ICs). To date, these goals have been achieved largely by shrinking semiconductor IC dimensions (eg, minimum feature size), thereby increasing production efficiency and reducing associated costs. However, this scaling also introduces increased complexity to the semiconductor manufacturing process. Accordingly, achieving continued advances in semiconductor ICs and devices requires similar advances in semiconductor manufacturing processes and technologies. [0003] In general, the minimu...

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Problems solved by technology

Therefore, chemically amplified photoresists may not be able to meet the next-generation photolithography requirements required by the continued development of semiconductor technology

[0004] Therefore, the prior art has not proven to be completely satisfactory in all respects

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