Subthreshold metal oxide semiconductor for large resistance

A circuit and body area technology, applied in the network, electrical components, impedance network and other directions using active components, can solve the problem of unrealistic large resistance value of integrated circuits

Active Publication Date: 2017-10-13
QUALCOMM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, some of these resistor types may be impractical for p

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  • Subthreshold metal oxide semiconductor for large resistance
  • Subthreshold metal oxide semiconductor for large resistance
  • Subthreshold metal oxide semiconductor for large resistance

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Embodiment Construction

[0023] Various aspects of the disclosure are described below. It should be apparent that the teachings herein may be embodied in a wide variety of forms and that any specific structure, function, or both disclosed herein is merely representative. Based on the teachings herein one skilled in the art should appreciate that an aspect disclosed herein may be implemented independently of any other aspects and that two or more of these aspects may be combined in various ways. For example, an apparatus may be implemented or a method practiced using any number of the aspects described herein. In addition, an apparatus may be implemented or a method may be practiced with other structure, functionality, or both, in addition to one or more of the aspects described herein. Further, an aspect may comprise at least one element of a claim.

[0024] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any aspect described herein as "exemplary" is ...

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Abstract

Certain aspects of the present disclosure generally relate to generating a large electrical resistance. One example circuit generally includes a first transistor 210, 220 having a gate, a source connected with a first node 214 of the circuit, and a drain connected with a second node 216 of the circuit. The circuit may also include a voltage-limiting device 224, 226 connected between the gate and the source of the first transistor, wherein the device, if forward biased, is configured to limit a gate-to-source voltage of the first transistor such that the first transistor operates in a sub-threshold region. The circuit may further include a second transistor 212, 222 configured to bias the voltage-limiting device with a current, wherein a drain of the second transistor is connected with the gate of the first transistor, a gate of the second transistor is connected with the first node, and a source of the second transistor is connected with an electric potential.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Patent Application No. 14 / 642,309, filed March 9, 2015, entitled "SUBTHRESHOLD METAL OXIDESEMICONDUCTOR FOR LARGE RESISTANCE," which claims U.S. Provisional Patent Application filed December 10, 2014 priority of No. 62 / 089,927, which applications are hereby incorporated by reference in their entirety. technical field [0003] Certain aspects of the present disclosure relate generally to electronic circuits and, more particularly, to circuits for generating and utilizing large resistance values. Background technique [0004] Resistance is the opposite of current flow through a medium. Resistors are used in a variety of circuits and can be produced in several different ways. Carbon, film, and wire wound resistors are just a few examples of applicable resistor types. However, some of these resistor types may not be practical for producing large resistance values ​​in integra...

Claims

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Application Information

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IPC IPC(8): H03H11/24H03K5/08H03H1/02
CPCH03H11/245H03K5/08H03H1/02H03H11/53H03H11/04
Inventor M·塔奇万德Y·拉亚维A·科哈利利
Owner QUALCOMM INC
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