Substrate processing system and method for processing multiple substrates
A substrate processing system and substrate technology, which are applied in coating, gaseous chemical plating, metal material coating process, etc., can solve problems such as increased cost and low output
Active Publication Date: 2020-01-10
APPLIED MATERIALS INC
View PDF7 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
In selecting such ALD and epitaxy processes for better device performance, the cost of fabricating devices in conventional single substrate processing chambers increases due to the very low throughput of substrate processing
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0026] Multi-chamber substrate processing systems are provided to maximize process throughput and maintain process uniformity. A multi-chamber substrate processing system may include a processing platform for ALD and CVD applications as well as one or more additional processing chambers for other CVD, PVD, etching, cleaning, heating, annealing and / or grinding processes. In one embodiment, throughput is improved by using a rotary track mechanism within a processing platform so that multiple substrates can be placed on the rotary track mechanism and processed in rotation and sequentially. Each of the plurality of substrates can be sequentially exposed to two or more process gases delivered from a plurality of gas distribution assemblies positioned a distance above the rotary track mechanism place. In addition, two substrates are loaded and unloaded from the carousel mechanism synchronously to save time and increase processing throughput.
[0027] A processing chamber with mult...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A substrate processing system and method for processing a plurality of substrates is provided and generally includes at least one substrate processing platform and at least one substrate storage platform. The substrate processing platform includes a rotating track system capable of supporting a plurality of substrate support assemblies and capable of continuously rotating the substrate support assemblies, each substrate support assembly carrying a substrate. Each substrate is positioned on a substrate support assembly disposed on a rotating rail system and is processed by at least one showerhead station and at least one buffer station positioned on the substrate processing platform. Rotating track system on top. A plurality of substrates disposed on the substrate support assemblies are processed in and out of the substrate processing platform. The substrate storage platform includes at least one dual substrate processing station, each dual substrate processing station including two substrate support assemblies to support two substrates on the substrate support assemblies.
Description
[0001] This application is a divisional application of the application entitled "Multi-chamber Substrate Processing System" with the filing date of January 31, 2013 and the application number of 201380007166.X. technical field [0002] Embodiments of the invention generally relate to apparatus for processing substrates. More particularly, the present invention relates to batch processing platforms for performing atomic layer deposition (ALD) and chemical vapor deposition (CVD) on substrates. Background technique [0003] The process of forming semiconductor devices is generally carried out in a substrate processing platform containing multiple chambers. In some instances, the purpose of a multi-chamber processing platform or cluster tool is to perform two or more processes sequentially on a substrate in a controlled environment. However, in other instances, a multi-chamber processing platform may perform only a single processing step on a substrate; it is desirable to have ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/458C23C16/54
CPCC23C16/45519C23C16/45551C23C16/4584C23C16/54H01L21/677H01L21/67742
Inventor J·约德伏斯基N·B·帕蒂班德拉P·K·纳万卡尔L-Q·夏藤田敏明R·霍夫曼J·吴S·萨蒂亚B·吴
Owner APPLIED MATERIALS INC