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Semiconductor memory device and semiconductor device

A semiconductor and memory technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve problems such as expensive processes, reducing the reliability or durability of semiconductor devices

Active Publication Date: 2022-05-31
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of these methods reduce the reliability and durability of semiconductor devices or require expensive processes

Method used

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  • Semiconductor memory device and semiconductor device
  • Semiconductor memory device and semiconductor device
  • Semiconductor memory device and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] A plurality of bit lines BL may be arranged in two dimensions and may be connected in parallel to a plurality of cell strings CSTR. Multiple cell string CSTRs can be

[0031] Each of the plurality of cell strings CSTR may include a ground selection transistor GST connected to the common source line CSL, a bit connected to

[0032] The common source line CSL may be commonly connected to the sources of the ground selection transistors GST. between the common source line CSL and the bit line BL

[0033] Referring to FIG. 3, a substrate 110 may be provided. The substrate 110 may be a first conductivity type such as P-type. buffer dielectric film 122

[0034] The horizontal electrode may include a ground selection line GSL, first to fourth word lines WL0 to WL3, and a string selection line SSL. absolutely

[0035] The insulating pattern 125 and the horizontal electrode may constitute the gate structure G. The gate structure G may be horizontally in the first direction D1

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PUM

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Abstract

Provided are a semiconductor memory device and a semiconductor device. The semiconductor memory device includes: a substrate, including a cell area and a connection area; a first word line stack, including a plurality of first word lines extending to the connection area and stacked on the cell area; a second word line stack, including a plurality of first word lines extending to the connection area. Area and a plurality of second word lines stacked on the cell area, the second word line stack is adjacent to the first word line stack; the vertical channel is located in the cell area of ​​the base, the vertical channel is connected to the base and connected to the base The plurality of first word lines are combined with the plurality of second word lines; the bridge region connects the first word lines in the first word line stack with the corresponding second word lines in the second word line stack; The flattened area, below the bridged area.

Description

Semiconductor memory device and semiconductor device [0001] This application requires the Korean Intellectual Property Office No. 10-2016-0046972 submitted on April 18, 2016 the rights of the Korean patent application, the disclosure of which is hereby incorporated by reference in its entirety. technical field Aspects of the inventive concept relate to semiconductor memory devices and semiconductor devices, and more particularly, to Reliability maintains high operating speed and can be manufactured at low cost in semiconductor memory devices and semiconductor devices. Background technique [0003] For high integration of semiconductor devices, vertical arrays including memory cells arranged in three dimensions have been proposed vertical semiconductor devices. Recently, various methods of increasing the operation speed of semiconductor devices have been proposed. However, these parties Most methods reduce the reliability or durability of semiconductor devices or re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11551H01L27/11578
CPCH10B41/20H10B43/20H10B41/49H10B43/50H10B43/40H10B43/27H10B41/50H10B41/40H10B41/27H10B41/30H10B43/30
Inventor 朴钟国金泓秀赵泰根
Owner SAMSUNG ELECTRONICS CO LTD