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Semiconductor device and corresponding manufacturing method

A technology for semiconductors and devices, applied in the field of semiconductor devices and corresponding manufacturing, can solve the problems of large forward voltage drop and bulk silicon resistivity of the device, and achieve the effect of reducing the on-voltage drop

Active Publication Date: 2021-05-25
广微集成技术(深圳)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the bulk silicon resistivity of existing high-voltage trench-gate Schottky diodes is very large, and the higher the withstand voltage of the device, the greater the bulk silicon resistivity required, which makes the forward conduction voltage drop of the device larger

Method used

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  • Semiconductor device and corresponding manufacturing method
  • Semiconductor device and corresponding manufacturing method
  • Semiconductor device and corresponding manufacturing method

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Embodiment 1

[0018] Such as figure 1 As shown, an embodiment of the present invention provides a method for manufacturing a semiconductor device, the method comprising:

[0019] S101, implanting an ion source into a preset implantation region of the semiconductor substrate;

[0020] S102, making the ion source enter a preset JFET area through thermal diffusion;

[0021] S103 , etching a trench structure on the semiconductor substrate on which the thermal diffusion has been completed, to form a semiconductor device.

[0022] In the embodiment of the present invention, the ion source is implanted in the preset implantation region of the semiconductor substrate; the ion source is made to enter the preset JFET region through thermal diffusion; and the trench structure is etched on the semiconductor substrate that has completed the thermal diffusion, so that The formed semiconductor device reduces the conduction voltage drop of the semiconductor device without increasing the leakage of the se...

Embodiment 2

[0062] Such as Figure 2-9 As shown, the embodiment of the present invention provides a semiconductor device, the semiconductor device has a trench structure, the bulk silicon region between any adjacent trenches in the trench structure constitutes a JFET region; the JFET region has an ion source doped miscellaneous.

[0063] Optionally, the semiconductor device includes an epitaxial layer and a doped N layer 5 grown on the epitaxial layer 2 ; the trench structure is disposed on the epitaxial layer 2 and the doped N layer 5 .

[0064] The JFET region has a Gaussian distribution of ion source doping both vertically and laterally; the doping concentration of the doped N layer is greater than the doping concentration of the epitaxial layer; the ion source includes an N-type doping source and P-type dopant source.

[0065] Further, a gate oxide layer 6 is grown on each trench of the trench structure and / or on the doped N layer.

[0066] Wherein, the thickness of the gate oxide ...

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Abstract

The invention discloses a semiconductor device and a corresponding manufacturing method, which are used to solve the problem of reducing the conduction voltage drop of the semiconductor device without increasing the leakage of the semiconductor device. The method includes: implanting an ion source into a preset implantation region of a semiconductor substrate; making the ion source enter a preset JFET region through thermal diffusion; etching a trench structure on the semiconductor substrate that has completed thermal diffusion to form a semiconductor device.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a semiconductor device and a corresponding manufacturing method. Background technique [0002] Schottky diode is a unipolar carrier device with electrons as carriers. It is widely used in switching power supplies and other high-speed power switching devices because of its low conduction voltage drop and fast switching frequency. . [0003] Existing TMBS (Trench Gate Schottky Diode) devices are widely used, which improves the characteristics of Schottky devices, especially because of the Schottky's own potential barrier reduction effect, Schottky will produce a larger voltage at high voltage. leakage current. However, the bulk silicon resistivity of existing high-voltage trench-gate Schottky diodes is very large, and the higher the withstand voltage of the device, the greater the bulk silicon resistivity required, which results in a larger forward voltage drop of the device. How to m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872H01L21/329
CPCH01L29/66143H01L29/8725
Inventor 单亚东谢刚张伟李一枝
Owner 广微集成技术(深圳)有限公司