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A semiconductor device front-end processing device

A front-end processing and semiconductor technology, applied in the direction of circuits, discharge tubes, electrical components, etc., can solve the problems of unable to solve the influence of condensation particle corrosion, unable to avoid condensation, etc., to avoid adverse effects, improve etching yield, and avoid corrosion. Effect

Active Publication Date: 2021-04-09
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method only performs gas purging in the etching process chamber, which can only improve the adhesion on the wafer surface and reduce the impact of etching by-products falling on the wafer surface during transportation or etching. However, it cannot avoid the condensation of halogen gas and its compounds remaining on the surface of the wafer with water vapor in the front-end processing chamber of the etching process, and cannot solve the corrosion effect of condensed particles on the front-end processing mechanism of the etching process. Avoid the impact of condensed particles on etching yield

Method used

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  • A semiconductor device front-end processing device
  • A semiconductor device front-end processing device
  • A semiconductor device front-end processing device

Examples

Experimental program
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Effect test

Embodiment 1

[0032] This embodiment provides a semiconductor device front-end processing device, such as Figure 4As shown, it includes a microenvironment providing chamber 1 for providing a uniform airflow environment for the substrate placed therein. One end of the microenvironment providing chamber 1 is provided with an airflow inlet 11, and the front-end processing device also includes a purging mechanism 2. The sweeping mechanism 2 is connected to the airflow inlet 11, and is used to supply the microenvironment with the purge airflow in the chamber 1.

[0033] It should be noted that the purging mechanism 2 provides the micro-environment with the purge flow input in the chamber 1 as an inert gas, such as nitrogen N 2 And argon Ar, the inert gas does not contain water vapor, which can prevent the halogen gas and its compounds remaining on the substrate surface after the etching process from condensing with water vapor, so that condensation particles will not form on the substrate surfa...

Embodiment 2

[0045] This embodiment provides a semiconductor device front-end processing device, which is different from that in Embodiment 1, such as Image 6 As shown, the purging mechanism 2 supplies the micro-environment with the purge air that is input into the chamber 1 as compressed air, and the water vapor content in the compressed air is very small, for example, the water vapor content in the compressed air is usually only 6-8PPM. Because the compressed air contains a small amount of water vapor, the purging mechanism 2 in this embodiment also includes a water mist filter 27 on the basis of embodiment 1, and the inlet of the water mist filter 27 is connected to provide the source 3, and the water mist filter 27 The outlet of the outlet is connected to the on-off valve 25; the water mist filter 27 is used to filter the water vapor in the purge gas provided by the supply source 3.

[0046] The setting of the water mist filter 27 in this embodiment can prevent a small amount of water...

Embodiment 3

[0049] This embodiment provides a front-end processing device for semiconductor equipment. The difference from Embodiment 1-2 is that in this embodiment, a flow limiter is used to control the flow rate of the purge air flow input into the uniform flow chamber, that is, this embodiment A flow restrictor is used to replace the mass flowmeter in Example 1-2.

[0050] Wherein, the input end of the flow restrictor is connected to the output end of the pressure gauge, and the output end of the flow restrictor is connected to the inlet of the uniform flow chamber, and the flow restrictor is used to control the flow rate of the purge air flow input to the uniform flow chamber. The setting of the flow restrictor, by controlling the flow rate of the sweeping air flow input to the uniform flow chamber, can well control the flow rate of the sweeping air flow input into the microenvironment providing chamber, so that the microenvironment providing chamber can provide The substrate placed t...

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PUM

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Abstract

The invention provides a front-end processing device for semiconductor equipment. The front-end processing device for semiconductor equipment includes a micro-environment providing chamber for providing a uniform airflow environment for the substrate placed therein, an air inlet is provided at one end of the micro-environment providing chamber, and also includes a purging mechanism, the purging mechanism is connected to the The airflow inlet is used to provide the input purge airflow into the chamber to the microenvironment. The front-end processing device for semiconductor equipment can avoid the condensation reaction of the residual halogen gas and its compounds on the surface of the substrate entering the micro-environment providing chamber after etching, so as to avoid the formation of condensed particles on the surface of the substrate, thereby preventing It can prevent the condensation particles from corroding the components in the micro-environment providing chamber, prolong the service life of the internal components in the micro-environment providing chamber, and avoid the adverse effects of the condensed particles on the etched substrate, improving the performance of the substrate. etch yield.

Description

technical field [0001] The present invention relates to the technical field of semiconductor processing, in particular to a front-end processing device for semiconductor equipment. Background technique [0002] Plasma devices are widely used in the fabrication processes of integrated circuits (ICs) or MEMS devices. The etching process is the key process for forming graphics patterns in chip manufacturing. The process gas generates plasma through radio frequency. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. These active particles and the substrate The bottom interaction causes various physical and chemical reactions to occur on the surface of the material, thereby changing the surface properties of the material and completing the etching process. [0003] In the etching process, since there will be gases or compounds of halogen elements remaining on the surface of the wafer (Wafer) after the etchi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/32H01J37/32853H01J37/3288
Inventor 彭宇霖
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD