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Epitaxial layer stripping device and stripping method

A technology for stripping devices and epitaxial layers, which is applied in sustainable manufacturing/processing, climate sustainability, and final product manufacturing. Easy entry and operation

Active Publication Date: 2017-12-01
紫石能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a kind of epitaxial layer stripping device and stripping method that can accelerate the initial stripping rate of etching for the problem that the low etching rate causes the epitaxial layer stripping process to be slow at the initial stage of the current epitaxial layer stripping process

Method used

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  • Epitaxial layer stripping device and stripping method
  • Epitaxial layer stripping device and stripping method
  • Epitaxial layer stripping device and stripping method

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Embodiment 1

[0027] This embodiment relates to a kind of epitaxial layer stripping device, refer to figure 2 , the part 3 to be stripped in this embodiment mainly includes a substrate 301, a sacrificial layer 302, an epitaxial layer 303 and a support layer 304, and the edge of the support layer 304 extends a part compared to the substrate 301, which is convenient for placing in the box body 2 above the side wall.

[0028] refer to figure 1 with image 3 The epitaxial layer stripping device 1 includes a box body 2 with an open upper end, the bottom of the box body is provided with an elastic buffer structure 4, and when the stripping part 3 is placed above the elastic buffer structure 4, the edge of the supporting layer 304 of the stripping part 3 is located in the box body 2 side walls.

[0029] Preferably, in this embodiment, the top of the side wall of the box body 2 of the epitaxial layer stripping device 1 has an inward inclined surface along its thickness for better supporting the...

Embodiment 2

[0037] This embodiment relates to a method for peeling off an epitaxial layer, such as figure 2 with image 3 As shown, it is suitable for the epitaxial layer stripping device in the above embodiment, and the specific methods include:

[0038] (1) Place the part 3 to be stripped above the elastic buffer structure 4 at the bottom of the box body 2, insert the light support block 402 into the limit groove 5, and ensure that the light support block 402 is placed horizontally; place the part 3 to be stripped on the light The top of the support block 402, so that the support layer 304 of the part 3 to be stripped is located above the side wall of the box body 2, so that the edge of the support layer 301 is warped and maintains a certain stress;

[0039] (2) Place the compact 6 on the support layer 304 of the part 3 to be stripped, and immerse the entire device 1 to be stripped together with the part 3 to be stripped in an etching solution containing hydrofluoric acid for corrosio...

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Abstract

The invention discloses an epitaxial layer stripping device and stripping method used for stripping an epitaxial layer of a to-be-stripped part which sequentially comprises a substrate, a sacrificial layer, the epitaxial layer and a support layer, wherein the epitaxial layer stripping device comprises a box body with an opening in the upper end; an elastic buffer structure is arranged at the bottom of the box body; and when the to-be-stripped part is put at the upper part of the elastic buffer structure, the edge of the support layer of the to-be-stripped part is located on the side wall of the box body and a certain flare angle is formed between the support layer of the to-be-stripped part and the substrate. At the beginning of etching, the elastic buffer structure is compressed to slowly move downwards, the flare angle between the epitaxial layer and the substrate is gradually increased under the combined action of the stress of the support layer and the support force of the epitaxial layer stripping device on the to-be-stripped part, a corrosion channel formed between a corrosive liquid and the interface of the sacrificial layer is expanded, and rapid entrance of the corrosive liquid and output of a reaction by-product are facilitated, thereby improving the epitaxial layer stripping rate at the beginning of etching.

Description

technical field [0001] The invention belongs to the manufacture of semiconductor devices and electronic devices, in particular to a novel epitaxial layer stripping device and stripping method. Background technique [0002] At present, in the manufacturing process of semiconductor thin film devices, especially for photovoltaic devices, LEDs, and semiconductor lasers, in order to realize the separation of functional materials and wafer substrates, and the stripped substrates can be reused, epitaxial layer lift-off (ELO ) process, the semiconductor thin film obtained by stripping is called ELO film. The traditional epitaxial layer lift-off process uses the epitaxial growth of the sacrificial layer on the substrate material, and then the epitaxial growth of the photoelectric conversion layer or functional layer, and then removes the sacrificial layer by etching, so as to realize the separation of the epitaxial layer and the growth substrate, and obtain a complete semiconductor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01L21/67126Y02P70/50
Inventor 兰立广
Owner 紫石能源有限公司
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