Aluminum wire forming method

Abstract

The invention discloses an aluminum wire forming method, comprising the steps of: providing a substrate and depositing an aluminum metal layer on the substrate; spin-coating photoresist (PR) on the aluminum metal layer; exposing and developing the PR to form a PR image; and taking the PR as a mask to carry out dry etching, wherein the dry etching comprises a main etching process and an over etching process, a bias power of an etching device in the main etching process is adjusted to a power capable of ensuring that the PR can paste a polymer on a quartz cover plate, and a conversion coupling power and the bias power of the etching device in the over etching process are respectively adjusted to the power capable of ensuring that the PR can paste the polymer on the quartz cover plate, and the quartz cover plate is an insulation plate for isolating an inductance coil and a wafer in the etching device. The application of the method can improve the yield of the aluminum wires.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming aluminum wires. Background technique [0002] With the wide application of electronic devices, the manufacturing process of semiconductors has been developed rapidly, and the manufacturing process of semiconductors involves the forming process of aluminum wires. figure 1 It is a flow chart of the aluminum wire forming method in the prior art, such as figure 1 As shown, the method includes the following steps: [0003] In step 101, a substrate is provided, and an aluminum metal layer is deposited on the substrate by a physical vapor deposition (PVD) process. [0004] Step 102, spin-coat photoresist (PR) on the aluminum metal layer. [0005] Step 103 , exposing and developing the PR, so that a mask pattern for forming aluminum lines appears on the PR. [0006] Step 104, forming aluminum lines on the aluminum metal layer by dry etching. [0007] D...

AI Technical Summary

Problems solved by technology

[0010] However, in the above-mentioned step 104, when the main etching and overetching are performed on the aluminum wire, the agglomerates generated by the chemical reaction between the etching gas and the metal aluminum will gradually deposit on the quartz reformer plate, and as the subsequent etching proceeds, the deposited The polymer on the quartz reformer can easily fall to the aluminum wire being etched due to gravity, reducing the yield of the aluminum wire

Images