Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An Efficient Substrate Lift-Off Method

A substrate, high-efficiency technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as easy damage of epitaxial structures

Active Publication Date: 2017-06-06
XIAMEN CHANGELIGHT CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a highly efficient substrate peeling method to increase the peeling rate between the epitaxial structure and the substrate, and effectively solve the problem that the epitaxial structure is easily damaged during peeling

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An Efficient Substrate Lift-Off Method
  • An Efficient Substrate Lift-Off Method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0041] like figure 1 As shown, the present invention discloses a solar cell epitaxial structure with a substrate that can be peeled off. On the surface of the substrate 1 from bottom to top, epitaxial buffer layer 2, sacrificial layer 3, ohmic contact layer 4, top cell window layer 5, Top cell emission region 6, top cell base region 7, top cell BSF layer 8, middle top cell tunnel junction 9, middle cell window layer 10, middle cell emission region 11, middle cell base region 12, middle cell BSF layer 13, Middle bottom cell tunnel junction 14 , composition graded layer 15 , bottom cell window layer 16 , bottom cell emitter region 17 , bottom cell base region 18 and bottom cell BSF layer 19 .

[0042] The substrate 1 is a 4-inch GaAs substrate with a thickness of 400 μm. The material of the buffer layer 2 is GaAs III-V compound with a thickne...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high-efficiency substrate peeling method. The high-efficiency substrate peeling method comprises the following steps: (1) a sacrificial layer is arranged between an epitaxial structure and a substrate and consists of AlInP / AlAs multilayer structures which grow alternately; and (2) chemical corrosion liquid is adopted to etch and peel the sacrificial layer. The high-efficiency substrate peeling method disclosed by the invention has the advantages that the peeling speed of the epitaxial structure and the substrate can be increased and the problem that the epitaxial structure is easily damaged in peeling can be solved.

Description

technical field [0001] The invention relates to the field of photoelectric technology, and in particular provides an efficient substrate peeling method. Background technique [0002] The development of optoelectronic technology is changing with each passing day. Among them, the absorption range of triple-junction gallium arsenide solar cells covers most of the wavelength bands of sunlight, and has the highest conversion efficiency among all solar cells. Light-emitting diodes (LEDs) are rapidly developing as the main light source due to their low power consumption, small size, and high reliability. [0003] Substrate lift-off technology provides necessary technical support for the development of solar cells and light-emitting diodes to thin film. The repeated utilization of the substrate also reduces the production cost of thin-film solar cells and thin-film LEDs, and reduces environmental pollution and waste of resources during the production process. Therefore, the use of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L31/0352H01L33/02H01L33/12
CPCH01L21/30604H01L21/30612H01L31/18H01L33/12
Inventor 林志伟张永陈凯轩姜伟蔡建九吴洪清李俊承方天足卓祥景张银桥黄尊祥王向武
Owner XIAMEN CHANGELIGHT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products