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Integrated circuit and its manufacturing method

A technology of integrated circuit and thermal resistance, applied in the field of memory

Active Publication Date: 2020-04-21
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These technologies rely only on a combination of access elements and memory cells to build memory cells

Method used

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  • Integrated circuit and its manufacturing method
  • Integrated circuit and its manufacturing method
  • Integrated circuit and its manufacturing method

Examples

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Embodiment Construction

[0055] Here are multiple embodiments of the programmable resistive memory element and its manufacturing method according to the present invention, and please refer to the accompanying drawings Figures 1 to 11A and Figure 11B .

[0056] figure 1 Shown is a simplified perspective view of memory columns in a cross-point array. The cross-point array includes a plurality of bit lines disposed in the bit line conductor layer, including the bit line 102 ; and includes a plurality of word lines disposed in the word line conductor layer, including the word line 101 . The intermediate layer is sandwiched between the bit line conductor layer and the word line conductor layer, and includes an interlayer insulating structure and a plurality of storage pillars passing through the interlayer insulating structure, including the memory pillar 110 . The memory pillar 110 has a first end 151 contacting the bit line 102 and has a second end 152 contacting the word line 101 . The memory pill...

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Abstract

An integrated circuit and its manufacturing method. The integrated circuit includes an intermediate layer between a plurality of bit lines in the bit line conductor layer and a plurality of word lines in the word line conductor layer. The intermediate layer includes a plurality of memory pillars passing through the interlayer insulating structure. Each memory column includes a storage unit and an access unit. The interlayer insulation structure at the memory cell level has a higher thermal resistance than the interlayer insulation structure at the access cell level.

Description

technical field [0001] The present invention relates to an integrated circuit memory, and more particularly to a memory including an integrated circuit using a phase change material and a method of manufacturing the same. Background technique [0002] Many three-dimensional memory (3D memory) technologies use phase-change materials, and other programmable resistance materials are also proposed to achieve high-density memory. For example, Li et al. published "Evaluation of SiO 2 Antifuse in a 3D-OTPMemory", which describes polysilicon diodes and antifuse (antifuse) arranged like memory cells. Sasago et al published "Cross-pointphase change memory with 4F 2 cell size driven by low-contact-resistivity poly-Si diode", which describes polysilicon diodes and phase change cells arranged like memory cells. Kau et al. published "Astackable cross point phase change memory" on pages 27.1.1 to 27.1.4 of the 2009 International Electron Devices Meeting (IEDM) 09-617, describing a memor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/24
CPCH10B63/80G11C7/04G11C13/003G11C2213/76G11C5/025G11C13/0004G11C2213/71H10B63/24H10B63/84H10N70/231H10N70/826H10N70/8616H10N70/8828H10N70/021H10N70/063H01L23/528H10N70/828H10N70/882
Inventor 龙翔澜
Owner MACRONIX INT CO LTD