A gate-controlled thyristor device with improved turn-off characteristics

A technology of thyristor and gate control, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of small range, inability to effectively reduce the threshold voltage of OFF-FET, and the inability to reduce the threshold voltage of OFF-FET to prevent shutdown failure, increase the maximum turn-off current, and improve the effect of reliability

Active Publication Date: 2020-03-31
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the traditional gate-controlled thyristor manufacturing process is based on the triple diffusion process of DMOS technology, the P well and N well on the cathode side are formed by implantation and diffusion, so the doping concentration of the N well is usually greater than that of the P well. , the adjustable range is very small, so adjusting the doping concentration of the N well cannot effectively reduce the threshold voltage of the OFF-FET
Therefore, the traditional gate-controlled thyristor structure cannot effectively reduce the threshold voltage of the OFF-FET

Method used

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  • A gate-controlled thyristor device with improved turn-off characteristics
  • A gate-controlled thyristor device with improved turn-off characteristics
  • A gate-controlled thyristor device with improved turn-off characteristics

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Embodiment Construction

[0015] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0016] Such as image 3 As shown, a gate-controlled thyristor device with improved turn-off characteristics is stacked sequentially from bottom to top with a metallized anode 301, a first conductivity type semiconductor substrate 302, a second conductivity type semiconductor epitaxial layer 303, and a metallized cathode 310; The inner upper layer of the second conductivity type semiconductor epitaxial layer 303 has a first conductivit...

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Abstract

The invention provides a gate-controlled thyristor device with improved turn-off characteristics, in which a metalized anode, a first conductivity type semiconductor substrate, a second conductivity type semiconductor epitaxial layer, and a metallization cathode are sequentially stacked from bottom to top; Type semiconductor well region, second conductivity type semiconductor well region, heavily doped first conductivity type semiconductor region, gate structure; only one side of the second conductivity type semiconductor well region has lightly doped first conductivity type semiconductor region, the lower surface of the lightly doped semiconductor region of the first conductivity type is in contact with the well region of the first conductivity type semiconductor, and the doping concentration and width of the lightly doped semiconductor region of the first conductivity type satisfy that when the polysilicon gate is at zero bias, The lightly doped semiconductor region of the first conductivity type is completely depleted by the second conductivity type semiconductor region; the present invention improves the maximum turn-off current of the gate-controlled thyristor device, effectively prevents shutdown failure, and improves the reliability of the gate-controlled thyristor device sex.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a gate-controlled thyristor device with improved turn-off characteristics. Background technique [0002] With the continuous development of human society, energy consumption continues to increase, while increasing energy output, there are also higher and higher requirements for energy utilization. The realization of these requirements depends on the development of power electronic devices. As a new semiconductor power switching device, MOS gate-controlled thyristor has attracted more and more people's attention. [0003] figure 1 Shown is a schematic structural diagram of a traditional N-type gate-controlled thyristor. Gate-controlled thyristor (MOS Controlled Thyristor, MCT) is a composite power device that combines the characteristics of MOSFET and thyristor. It also has high input impedance of MOSFET, fast switching speed, convenient gate control and high bloc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/745H01L29/06
CPCH01L29/0684H01L29/7455
Inventor 任敏林育赐苏志恒谢驰李泽宏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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