Unlock instant, AI-driven research and patent intelligence for your innovation.

Plasma processing device for adjusting size of exhaust flow path

A technology of exhaust flow path and treatment device, which is applied to circuits, electrical components, discharge tubes, etc., can solve the problems of by-product pollution, damage, and shorten the replacement cycle of chamber 2, and achieve the effect of extending the replacement cycle.

Active Publication Date: 2018-10-23
GIGALANE CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in this method, the size of the exhaust flow path 7 is fixed, so there is a problem that it is difficult to uniformly apply to various substrates processed by a plasma processing device, and the chamber 2 needs to be replaced according to the substrate.
[0007] In addition, since the size of the exhaust flow path 7 is adjusted by changing the shape of the chamber 2, there is a problem that the chamber 2 is easily contaminated by by-products during the processing of the substrate 1 and is easily damaged by plasma, resulting in shorter replacement intervals for chamber 2

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma processing device for adjusting size of exhaust flow path
  • Plasma processing device for adjusting size of exhaust flow path
  • Plasma processing device for adjusting size of exhaust flow path

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] The purpose, specific advantages and novel features of the present invention will become easier to understand in the following detailed description and embodiments described in conjunction with the accompanying drawings. It should be noted that when referring to components in the drawings in this specification, the same components should be given the same reference numbers as much as possible even if they are shown in different drawings. Also, although the terms first, second, etc. may be used to describe various constituent elements, the constituent elements are not limited to the terms. The terms are used only for the purpose of distinguishing one constituent element from another. In addition, in describing the present invention, when it is judged that the specific description of the related known technology would unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

[0043] Such as figure 2 As shown, the plasma process...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A plasma processing apparatus for controlling the size of an exhaust flow path is disclosed. A plasma processing apparatus for controlling the size of an exhaust flow path according to the present invention includes a chamber; a chuck installed in the chamber to be placed on the substrate; an exhaust pump connected to the chamber to suck process gas existing in the chamber; an exhaust flow path formed between the chamber and the chuck to allow the process gas to flow toward the exhaust pump; and an exhaust flow path adjusting part installed in the chamber to change the size of the exhaust flowpath.

Description

technical field [0001] The present invention relates to a plasma processing device that adjusts the size of an exhaust flow path. Background technique [0002] Such as figure 1 As shown, the existing plasma processing device includes a chamber 2 with a space inside to process the substrate 1 with plasma, a shower head 3 that allows engineering gas to flow into the interior of the chamber 2, and applies a high-frequency voltage to the inflowing engineering gas to form plasma. The antenna 4 is located inside the chamber 2 and the chuck 5 is placed on the substrate, and the exhaust pump 6 is connected to one side of the chamber 2 to suck the engineering gas. [0003] An exhaust flow path 7 is formed inside the chamber 2 to allow engineering gas to flow in the direction of the exhaust pump 6 . [0004] On the one hand, in order to improve the uniformity (Uniformity) of the substrate 1, it is extremely important to uniformly process the inside and outside of the substrate 1. Fo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/32449H01J37/32458H01J37/32715H01J37/32834H01L21/02274H01L21/3065H01L21/683H01L2021/60187
Inventor 郑相坤金亨源丘璜燮金铉济郑熙锡
Owner GIGALANE CO LTD