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A light-emitting diode chip and its manufacturing method

A technology of light-emitting diodes and chips, which is applied in semiconductor/solid-state device components, semiconductor devices, electrical components, etc., can solve the problems of low luminous efficiency of light-emitting diodes, and achieve the effect of increasing the number of holes and improving luminous efficiency

Active Publication Date: 2020-09-08
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem of low luminous efficiency of light-emitting diodes in the prior art, an embodiment of the present invention provides a chip of a light-emitting diode and a manufacturing method thereof

Method used

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  • A light-emitting diode chip and its manufacturing method
  • A light-emitting diode chip and its manufacturing method
  • A light-emitting diode chip and its manufacturing method

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Experimental program
Comparison scheme
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Embodiment 1

[0038] An embodiment of the present invention provides a light emitting diode chip, see figure 1 , the chip includes a substrate 1 and an N-type gallium nitride layer 2, a multi-quantum well layer 3 and a P-type gallium nitride layer 4 sequentially stacked on the substrate 1, and the P-type gallium nitride layer 4 is provided with a The first groove 10 of the N-type gallium nitride layer 2, the N-type gallium nitride layer 2 in the first groove 10 is provided with an N-type electrode 5, and the P-type GaN layer 4 is provided with a P-type electrode 6 .

[0039] In this embodiment, the P-type gallium nitride layer 4 is also provided with a second groove 20 extending to the multi-quantum well layer 3, and the multi-quantum well layer 3 in the second groove 20 is provided with two magnetic material layers 7. The two magnetic material layers 7 are arranged opposite to each other. The opposite sides of the two magnetic material layers 7 are magnetic poles with different names, and...

Embodiment 2

[0063] The embodiment of the present invention provides a method for preparing a light-emitting diode chip, which is suitable for preparing the chip provided in Embodiment 1, see figure 2 , the preparation method comprises:

[0064] Step 101: growing an N-type GaN layer, a multi-quantum well layer and a P-type GaN layer sequentially on the substrate.

[0065] Figure 3a It is a schematic structural diagram of the chip after step 101 is executed. Wherein, 1 is a substrate, 2 is an N-type gallium nitride layer, 3 is a multi-quantum well layer, and 4 is a P-type gallium nitride layer. like Figure 3a As shown, an N-type gallium nitride layer 2 , a multi-quantum well layer 3 and a P-type gallium nitride layer 4 are sequentially stacked on a substrate 1 .

[0066] Specifically, this step 101 may include:

[0067] The N-type gallium nitride layer, the multi-quantum well layer and the P-type gallium nitride layer are sequentially grown on the substrate by metal organic compound...

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Abstract

The invention discloses a light emitting diode chip and a preparation method therefor, and belongs to the technical field of a semiconductor. The chip comprises a substrate, and an N type gallium nitride layer, a multiple-quantum-well layer and a P type gallium nitride layer which are stacked on the substrate in sequence; a first groove which extends to the N type gallium nitride layer is formed in the P type gallium nitride layer; an N type electrode is arranged on the N type gallium nitride layer in the first groove; a P type electrode is arranged on the P type gallium nitride layer; a second groove which extends to the multiple-quantum-well layer is formed in the P type gallium nitride layer; two magnetic material layers are arranged on the multiple-quantum-well layer in the second groove; the two magnetic material layers are arranged oppositely; the opposite two side surfaces of the two magnetic material layers are different-name magnetic poles; and the P type gallium nitride layeris clamped between the two magnetic material layers. By virtue of the light emitting diode chip, the number of holes injected to the multiple-quantum-well layer can be increased, thereby further improving composite light emission in the multiple-quantum-well layer and finally improving the light emitting efficiency of the light emitting diode.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a chip of a light emitting diode and a preparation method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor light emitting device made by using the principle of semiconductor PN junction electroluminescence. The chip is the core part of the light emitting diode. [0003] The existing chip includes a sapphire substrate and an N-type gallium nitride layer, a multi-quantum well layer and a P-type gallium nitride layer stacked on the sapphire substrate in sequence. In the groove of the GaN layer, an N-type electrode is arranged on the N-type GaN layer in the groove, and a P-type electrode is arranged on the P-type GaN layer. When current is injected through the P-type electrode and the N-type electrode, the electrons provided by the N-type GaN layer and the holes provided by the P-type GaN laye...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/00H01L33/00
CPCH01L23/564H01L33/007
Inventor 王群郭炳磊魏晓骏董彬忠李鹏王江波
Owner HC SEMITEK ZHEJIANG CO LTD