Discretized film system design method of broadband euv multilayer film based on qiga

Abstract

The present invention discloses a QIGA(quantum inspired genetic algorithm)-based discretized film system design method of a broadband EUV (extreme ultraviolet) multilayer film. The method comprises the following steps that: 1) the initial parameter values of the design method are inputted; and 2) quantum encoding is performed on the film layer deposition time of the multilayer film, so that an initial quantum group Q (t) can be generated; (3) observation states R (t) of quantum superposition states are constructed according to the quantum probability amplitude of the individuals in the initial quantum group Q (t); (4) whether a termination condition is satisfied is judged, if the termination condition is satisfied, the method stops and outputs an optimal solution, otherwise, the method continues; (5) the fitness of individuals in the R (t), which characterizes the deposition time of a discretized film system, is calculated, individuals corresponding the optimal deposition time of thefilm system are saved; (6) a quantum rotation gate is updated, and the updated quantum rotation gate is adopted to update the Q (t); (7) the Q (t) is observed, R (t) is generated and is evaluated, optimal individuals are retained; (8) the Q (t) is updated through a quantum NOT gate; and (9) an elite retention strategy is adopted, and the method shifts to step (4). With the method of the inventionadopted, problems such as low solution efficiency and high requirement for thickness control precision during film coating of an existing EUV multilayer film design method can be solved.

Description

Technical field

[0001] The invention specifically relates to a method for designing a discretized film system of a broadband extreme ultraviolet (EUV) multilayer film based on a quantum derived genetic algorithm (QIGA), and belongs to the field of EUV multilayer film research and development. Background technique

[0002] Lithography technology is the main process in the production of semiconductor industry today, and the mirror based on the extreme ultraviolet (EUV) multilayer film design is the most potential lithography technology-the core reflective element of EUV lithography technology. Because EUV multilayer film can achieve high reflectivity in the EUV band, it is also widely used in EUV astronomy, EUV spectroscopy, synchrotron radiation and many other fields. Therefore, the research and development of EUV multilayer film has attracted the attention of relevant people at home and abroad. At present, the extreme ultraviolet Mo / Si multilayer film can achieve a reflectivity ...

Images