A kind of silicon wafer photolithographic exposure method

Abstract

The invention provides a method for photoetching and exposing a silicon wafer based on a Canon exposure machine and a Perkin-elmer exposure machine, and relates to the technical field of semiconductormanufacture. The method for photoetching and exposing a silicon wafer based on the Canon exposure machine and the Perkin-elmer exposure machine with simple operation and low equipment cost comprisesthe following steps: (1) completing growth of a growth layer on a first wafer, and determining whether the growth layer is SiO2 or metal, entering the step (2) if the growth layer is SiO2, and entering the step (3) if the growth layer is metal; (2) exposing with Canon; (3) exposing with PE; (4) determining whether the growth of the growth layer is completed or not, finishing if the growth is completed, otherwise entering the step (5); (5) growing, namely completing growth of the first growth layer, determining whether the growth layer is SiO2 or metal, entering the step (6) if the growth layeris SiO2, and entering the step (7) if the growth layer is metal; (6) performing Canon alignment exposure; and (7) performing PE exposure. The method has the advantage of high product quality.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a processing technology for realizing pattern transfer from a photolithography plate to a wafer. Background technique [0002] At present, in the prior art, the process of transferring graphics from the photolithography plate to the wafer can usually be divided into many times, and each time needs to go through three steps of growth, alignment, and exposure; among them, in order to ensure the position accuracy of the graphics, each time The alignment step will be particularly important (the alignment here refers to the alignment between the photoresist plate and the wafer, so that the image on the photoresist plate is accurately transferred to the wafer). However, since the growth layer of the wafer is affected by the process requirements, it can be divided into SiO 2 Layer or metal layer, therefore, if a single type of exposure machine is used for exposure, ...

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Problems solved by technology

However, since the growth layer of the wafer is affected by the process requirements, it can be divided into SiO 2 Layer or metal layer, therefore, if a single type of exposure machine is used for exposure, there will be problems such as low alignment efficiency and poor alignment accuracy

[0003] Specifically, in the prior art, most of the Canon stepper exposure machines are used for photolithography exposure. 2 When growing a layer, it will have the characteristics of high alignment accuracy and high alignment efficiency; but when targeting a metal growth layer, due to the large thickness and high reflectivity of the metal, the accuracy of automatic alignment will become extremely poor , which has a great impact on the overall photolithography exposure process

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