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power semiconductor device

A technology of power semiconductors and semiconductors, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc.

Active Publication Date: 2021-07-27
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this reason, it may be desirable to keep the emitter efficiency (e.g., anode emitter efficiency) of the body diode of the device relatively low in the reverse conducting state

Method used

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Embodiment Construction

[0028] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustration specific embodiments in which the invention may be practiced.

[0029] In this regard, directional terms such as "top", "bottom", "below", "front", "behind", "rear", may be used with reference to the orientation of the drawings being described. "First", "tail", "below", "above", etc. Because parts of an embodiment can be located in many different orientations, directional terminology is used for purposes of illustration and is by no means limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Accordingly, the following detailed description should not be read in a limiting sense, and the scope of the invention is defined by the appended claims.

[0030] Reference will now be made in detail to ...

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PUM

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Abstract

A power semiconductor device comprising: a semiconductor body having a front side and a back side; a first load terminal arranged on the front side and a second load terminal arranged on the back side; a drift region included in the semiconductor body and having doped sundries; and the first primitive, arranged on the front. The power semiconductor device also includes a second primitive. In addition, the power semiconductor arrangement comprises a first back emitter region comprised in the semiconductor body, the first back emitter region being electrically connected to the second load terminal and having a dopant of the second conductivity type, wherein The first back emitter region and the first cell have a first common lateral extent; and a second back emitter region, included in the semiconductor body, the second back emitter region being electrically connected to the second load terminal and The dopant has the first conductivity type, wherein the second back emitter region and the second cell have a second common lateral extension.

Description

technical field [0001] The present description relates to an embodiment of a power semiconductor device and to an embodiment of a method of processing a power semiconductor device. In particular, the present description relates to an embodiment of a power semiconductor device having reverse conduction capability and to an embodiment of a method of processing the power semiconductor device. Background technique [0002] Many functions of modern devices in automotive, consumer and industrial applications, such as converting electrical energy and driving electric motors or electric machines, rely on power semiconductor devices. For example, insulated gate bipolar transistors (IGBTs), metal oxide semiconductor field effect transistors (MOSFETs), and diodes have been used in a variety of applications including, but not limited to, power supplies and power converters, to name a few switch in . [0003] A power semiconductor device typically includes a semiconductor body configur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/0603H01L29/66068H01L29/66325H01L29/66969H01L29/7393H01L29/407H01L29/7391H01L29/1095H01L29/7397H01L29/0696H01L29/66348
Inventor J.G.拉文F.D.普菲尔施
Owner INFINEON TECH AG
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