Polishing pad dressing method, and chemical mechanical polishing method comprising polishing pad dressing method
A technology of chemical mechanics and polishing pads, which is applied in the direction of grinding/polishing equipment, parts of grinding machine tools, abrasive surface adjustment devices, etc., and can solve the problems of decreased flatness of wafers, increased surface defects, and over-polishing of the edges of polishing pads, etc. , to achieve the effects of reduced thickness consumption, reduced number of wafer surface defects, and extended service life
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[0057] This embodiment is a chemical mechanical polishing method, wherein the polishing process and process parameters are listed in Table 1, and the trimming process parameters are listed in Table 2. The radius dimension of the polishing pad in this example is 254 mm and the size of the dresser is 108 mm.
[0058] Table 1 Polishing process and process parameters
[0059]
[0060] Table 2 trimming process parameters
[0061]
[0062]
[0063] Note, in the division of the area size in Table 2, the starting point 20mm is the edge of the polishing pad. 20mm. The move roadmap of the trimmer is as follows figure 1 shown.
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