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Insulated gate bipolar transistor

A technology of bipolar transistors and insulated gates, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of low IGBT operating frequency, achieve high forward/reverse blocking capabilities, and improve the effect of turning off speed

Active Publication Date: 2018-06-05
强华时代(成都)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as stated in the above working principle, as a bipolar carrier device, the storage effect of minority carriers in the drift region at the moment of turn-off makes the IGBT operating frequency not high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] like figure 2 As shown, the insulated gate bipolar transistor of this example includes a main IGBT region A and an IGBT shunt region B that are in contact with each other and distributed left and right; the IGBT shunt regions B include third electrodes 103, P Type semiconductor third electrode base region 306, N-type semiconductor field stop region 305, P-type semiconductor drift region 401, N-type semiconductor charge storage region 304, N-type semiconductor first electrode base region 303, P-type semiconductor first electrode heavily doped The hetero contact region 302 and the first electrode 101;

[0050] The structure distribution of the main IGBT region A and the IGBT shunt region B at the same height in the horizontal position is similar. Unlike the IGBT shunt region B, the main IGBT region A is provided with a third electrode 103 in the lower part of the P-type semiconductor 306 region. The contacted N-type semiconductor third electrode highly doped receiving r...

Embodiment 2

[0057] This embodiment is similar in structure to Embodiment 1, except that the second electrode in the C region in Embodiment 2 adopts a separate structure, such as Figure 7 What is shown is a mode of embodiment 2, and the separated second electrodes include the main second electrode 102 and the separated second electrode 102a. Wherein, the main second electrode 102 is located on the side of the main IGBT region A, and the separated second electrode 102a is located on the side of the IGBT shunt region B; it is worth mentioning that the separated second electrode 102a can be connected to the main second electrode 102, or floating, or directly connected to the first electrode 101 .

[0058] The working principle of this embodiment is the same as that of Embodiment 1, both of which can realize the shunting of off-off carriers and increase the off-off speed.

[0059] Embodiment 2 can also adopt other separated second electrode structures, such as Figure 8 As shown, another se...

Embodiment 3

[0062] like Figure 13 As shown, the structure of this embodiment is similar to that of Embodiment 1, the difference is that the drift region 401 of Embodiment 2 extends into the main IGBT region A in the lateral direction, and the extended part replaces the drift region 402 .

[0063] In actual operation, the drift region can still realize the electronic current to turn on the base of the parasitic PNP, realize hole injection and generate a large current, so the working principle is the same as that of Embodiment 1, and has a higher turn-off speed.

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Abstract

The invention belongs to the field of semiconductor technology, and particularly to an insulated gate bipolar transistor. According to the insulated gate bipolar transistor, based on a traditional longitudinal IGBT device, an IGBT shunting area is arranged and a third electrode extending structure and a third electrode region highly doped receiving region are arranged at a third electrode; shunting of different carriers can be realized at one hand, and a second-kind carrier high-density channel and a first-kind carrier high-density channel are respectively formed at a first electrode and the third electrode, thereby realizing carrier single-pole conduction at a switching-off instant and improving switching-off speed; and furthermore P / N junctions which are alternatively arranged in a transverse direction are utilized in a drift region, thereby realizing transverse electric field modulation in the drift region in a switched-off state and realizing relatively high forward / reverse blocking capability.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is an integrated technology that combines the MOSFET structure and the working mechanism of a bipolar junction transistor. like figure 1 The schematic diagram of the conventional IGBT device structure and the corresponding schematic diagram of the equivalent circuit are shown. In the conventional IGBT structure diagram, the IGBT includes a first electrode 101, a second electrode 102, a third electrode 103, a second electrode insulating layer 201, and an n-type high Doping concentration emitter region 301 , p-type high-doping concentration emitter contact region 302 , p-type base region 303 , n-type drift region 402 , n-type field stop layer region 305 , and p-type collector region 306 . [0003] When the voltage of the second electrode 102 is higher th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/10H01L29/739
CPCH01L29/0684H01L29/1025H01L29/7395
Inventor 汪志刚王冰
Owner 强华时代(成都)科技有限公司
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