Device and method for improving film thickness uniformity

A technology with uniform film thickness and wafer, applied in the direction of gaseous chemical plating, coating, electrical components, etc., can solve the problems of incomplete radio frequency shielding, radio frequency overlap, etc., to achieve the elimination of film thickness mutation, uniform film distribution, Effect of reducing film thickness difference

Inactive Publication Date: 2018-07-24
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, when the above-mentioned double cavity structure is adopted, since the two cavities are closely connected and the radio frequency shielding between the two cavities is not complete, there will be a certain degree of overlap between the radio frequencies near the two cavities. Phenomenon

Method used

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  • Device and method for improving film thickness uniformity
  • Device and method for improving film thickness uniformity
  • Device and method for improving film thickness uniformity

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Embodiment Construction

[0038] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0039] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation and simplification are included, therefore, it should be avoided to be interpreted as a limitation of the present invention.

[0040] In the following specific embodiments of the present invention, please refer to Figure 4 , Figure 4 It is an exploded schematic view of a device for improving film thickness uniformity in a preferred embodiment of the present invention. Such as Figure 4As shown, a kind of device that improves film thickness uniformity of the present inve...

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Abstract

The invention discloses a device and a method for improving film thickness uniformity. Wafer placing heating platforms in two technological chambers of a PECVD (Plasma Enhanced Chemical Vapor Deposition) machine are designed as rotary platforms of which the speeds can be controlled by programs; through setting of the rotation speeds of the platforms, the wafers are guaranteed to rotate for an integer number of turns within the technological time, so that influence of radio frequency overlap between the two chambers on the peripheries of the whole wafers is uniform, films around the wafers areuniformly distributed, and sudden change, caused by the radio frequency overlap, of the film thickness is eliminated; by virtue of a characteristic that the radio frequency overlap can increase the film deposition rate, the film thickness difference between the centers and the edges of the films is reduced, so that the film thickness throughout the whole wafers is more uniform.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, and more specifically, to a device and method for improving film thickness uniformity. Background technique [0002] Plasma Enhanced Chemical Vapor Deposition (PECVD) uses microwave or radio frequency (RF) to ionize the gas containing the constituent atoms of the film to form plasma locally, through diffusion, adsorption, surface reaction, and desorption of by-products , Exhaust gas discharge and other processes to complete the growth process of the required film. [0003] Due to the strong chemical activity of the plasma, the chemical reaction of PECVD can be carried out at a lower temperature. In the production process, the uniformity of the film will greatly affect the quality of the product, so good film uniformity is very important. The uniformity of the film is mainly affected by the distribution of plasma density, and the distribution of plasma dens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/458C23C16/505C23C16/52
CPCC23C16/4584C23C16/505C23C16/52H01L21/6719H01L21/68742H01L21/68792H01L21/02274H01J37/32724H01J37/32899H01J37/32082H01J37/32733H01J37/32807C23C16/5096C23C16/54C23C16/45536H01L21/67017H01L21/67253
Inventor 钟晓兰
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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