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Level shifting circuit and integrated circuit

A level shifting and circuit technology, applied in the direction of logic circuit, logic circuit coupling/interface using field effect transistor, logic circuit connection/interface layout, etc., can solve the problem of increasing the size of traditional level shifting circuit 1, etc. Achieve the effects of low damage probability, high operating speed and long service life

Active Publication Date: 2022-02-25
ELITE SEMICON MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this common practice will increase the size of the conventional level shift circuit 1

Method used

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  • Level shifting circuit and integrated circuit
  • Level shifting circuit and integrated circuit
  • Level shifting circuit and integrated circuit

Examples

Experimental program
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Effect test

Embodiment Construction

[0035]Various exemplary embodiments will be described more fully hereinafter with reference to the accompanying drawings, in which some exemplary embodiments are shown. However, inventive concepts may be embodied in many different forms and should not be construed as limited to the illustrative embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. Like numerals indicate like components throughout, and the term "or" as used herein may include any one or all combinations of more of the associated listed items, as the case may be.

[0036] [Example of level shift circuit]

[0037] An embodiment of the present invention provides a level shifting circuit. Compared with the traditional level shift circuit, this level s...

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Abstract

Embodiments of the present invention provide a level shift circuit and an integrated circuit using the level shift circuit. Compared with the traditional level shift circuit, this level shift circuit also has another pair of PMOS transistors and another pair of NMOS transistors, wherein the other pair of PMOS transistors is connected to a pair of PMOS transistors, and the other pair of NMOS transistors is connected to a pair of NMOS transistors. The multiple PMOS transistors and multiple NMOS transistors in the level shifting circuit can be protected, so that the service life of the level shifting circuit is increased, and the damage probability of the level shifting circuit is reduced. The other pair of NMOS transistors that are turned on can operate in the saturation region instead of the nonlinear region, so that the operation speed of the level shifting circuit can be increased.

Description

technical field [0001] The present invention relates to a level shift circuit and an integrated circuit using the level shift circuit, wherein the level shift circuit is used for level shifting the first logic high level of the input voltage to generate the second logic of the output voltage High standard. Background technique [0002] In the design of today's integrated circuits, logic cores and I / O units may be powered by different voltages. For example, in an integrated circuit manufactured by a 0.13 micron process, the logic core is powered by 1.2 volts, and the I / O unit is powered by 3.3 volts. A level shifting circuit is usually required because the signals of the logic core operate in a first voltage range (eg, 0 to 1.2 volts) and the signals of the I / O cells operate in a second voltage range (eg, 0 to 3.3 volts). To ensure that the signals passed between the logic core and the I / O cells are in the correct logic state. [0003] Please refer to figure 1 , figure 1...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/0185
CPCH03K19/018507
Inventor 周敏忠
Owner ELITE SEMICON MEMORY TECH INC