Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for detecting reliability of writing frequency of EEPROM

A detection method and technology of write times, applied in static memory, instruments, etc., can solve the problems of EEPROM unable to spot check write times, verify reliability, etc., and achieve the effect of improving product quality and reliability

Inactive Publication Date: 2018-08-24
JIANGSU KAOU WANHONG ELECTRON
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Purpose of the invention: In order to overcome the deficiencies in the prior art, provide a reliable detection method for EEPROM write times that can solve the problem that the original EEPROM batch incoming materials cannot be sampled to verify the reliability of the write times

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for detecting reliability of writing frequency of EEPROM
  • Method for detecting reliability of writing frequency of EEPROM
  • Method for detecting reliability of writing frequency of EEPROM

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Below in conjunction with accompanying drawing and specific embodiment, further illustrate the present invention, should be understood that these embodiments are only for illustrating the present invention and are not intended to limit the scope of the present invention, after having read the present invention, those skilled in the art will understand various aspects of the present invention Modifications in equivalent forms all fall within the scope defined by the appended claims of this application.

[0024] Such as figure 1 As shown, the present invention provides a kind of EEPROM write times reliable detection method, comprises the steps:

[0025] 1) The upper computer sends a start command;

[0026] 2) The lower computer starts to write the EEPROM;

[0027] 3) The lower computer reads and verifies the result of the write operation;

[0028] 4) Judging whether the data is correct, if the result is correct, then return to step 2) for the next cycle, if the result ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for detecting reliability of writing frequency of an EEPROM. The method comprises the following steps: (1) sending starting commands via an upper computer; (2) enabling the upper computer to start carrying out writing operation on the EEPROM; (4) reading and verifying results of the writing operation via a lower computer; (4) judging whether data is correct or not,returning to the step (2) and carrying out a next cycle if the results are correct, and sending final results to the upper computer if the results are incorrect; and (5) actively reporting the commands to the upper computer via the lower computer after the cycle of the writing operation is ended, and receiving the commands via the upper computer, thus completing detection. Compared with the priorart, the method is capable of effectively detecting the reliability of the writing frequency of the EEPROM; the whole self-detection process is completely and automatically carried out by a system without manual participation; the problem that the writing frequency cannot be casually detected and the reliability of the writing frequency cannot be verified when the EEPROM is provided in batches inthe prior art can be solved; the quality and the reliability of products can be greatly improved.

Description

technical field [0001] The invention specifically relates to a method for reliably detecting EEPROM writing times. Background technique [0002] With the continuous advancement of my country's smart grid construction, the reliability requirements of the terminal sensor smart meter of the smart grid are getting higher and higher. The reliability of the EEPROM write times of important information such as electricity stored in the smart meter is particularly important. However, in the existing technology , It is also impossible to realize the sampling inspection of the write times of EEPROM batches, and the quality inspectors cannot effectively detect the reliability of the write times of EEPROM, so that the reliability of the final product cannot be guaranteed. Contents of the invention [0003] Purpose of the invention: In order to overcome the deficiencies in the prior art, provide a reliable detection method for EEPROM writing times that can solve the problem that the orig...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/56
CPCG11C29/56
Inventor 赵春华刘辉张玉娇魏英
Owner JIANGSU KAOU WANHONG ELECTRON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com