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A kind of semiconductor laser and control method

A laser and semiconductor technology, applied in the field of optoelectronics, can solve the problems of low productivity and reliability, high cost, and low tuning range of tunable semiconductor lasers, and achieve the effect of reducing complexity and simplifying the testing process.

Active Publication Date: 2020-08-04
NANJING UNIV
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Problems solved by technology

[0004] The invention proposes a semiconductor laser and a control method to solve the problems of low tuning range, high cost, low manufacturability and reliability of tunable semiconductor laser technology

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  • A kind of semiconductor laser and control method
  • A kind of semiconductor laser and control method
  • A kind of semiconductor laser and control method

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Embodiment Construction

[0026] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in conjunction with specific embodiments of the present application and corresponding drawings. Apparently, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0027] The laser based on the external cavity structure is a method of hybrid integration. The corresponding wavelength is selected through the mechanical movement of external optical components, such as micro-electromechanical systems (MEMS). The wavelength is tuned, with higher output power, and narrower linewidth can be obtained. However, since th...

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Abstract

The invention provides a semiconductor laser and a control method. The semiconductor laser comprises grating regions and a gain region, wherein at least two grating regions are manufactured on the same laser chip in series; the grating period in each grating region is unchanged, and the grating periods of different grating regions are gradually increased or gradually decreased along the laser chip; and one gain region is included between every two adjacent grating regions. The invention further comprises a control method for the semiconductor laser. The method comprises the following steps ofinjecting working current which is higher than a threshold value into any active region, injecting transparent current into the rest of active regions, and generating single-mode laser emission; and adjusting tuning current of the grating region adjacent to the active region injected with the working current, and changing the wavelength of the single-mode laser. According to the semiconductor laser and the control method, the problems of low tuning range, high cost, low productivity and low reliability of a tunable semiconductor laser technology are solved.

Description

technical field [0001] The present application relates to the field of optoelectronic technology, in particular to a tunable distributed Bragg reflection semiconductor laser and a control method. Background technique [0002] Tunable lasers are widely used in spectroscopy, photochemistry, biology, medicine, integrated optics, pollution monitoring, semiconductor material processing, information processing and communication. Modern optical communication systems are one of the most important fields of application of tunable lasers. There are three main implementation schemes for tunable lasers used in dense wavelength division multiplexing (DWDM) optical communication systems: external cavity structure, structure based on distributed feedback laser (DFB) array, and sampled Bragg reflection (SGDBR) laser. pros and cons. [0003] The tuning speed of tunable lasers based on the external wall structure cannot achieve fast tunability at the microsecond and nanosecond level. The t...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/12H01S5/125H01S5/042
CPCH01S5/042H01S5/1215H01S5/125
Inventor 邹正鹏赵雍施跃春肖如磊马春良陈向飞
Owner NANJING UNIV
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