Chamber and plasma processing device

Abstract

The invention provides a chamber and a plasma processing device. A gate structure composed of multiple grid plates is disposed in a uniform flow chamber, the product of the first distance d1 between the gate structure and the top wall of the uniform flow chamber and the pressure p in the flow chamber, the product of the second distance d2 between the gate structure and the bottom wall of the uniform flow chamber and the pressure p in the uniform flow chamber and the product of the third distance d3 between adjacent grid plates and the pressure p in the uniform flow chamber are all less than 1.33pa*m or are all greater than 13.3pa*m, so discharge in the uniform flow chamber can be avoided. Even if the radio frequency power is relatively high or the air pressure is relatively high, the gatestructure can still work normally, so the process window and the applicable range can be expanded, especially for high pressure and high power process conditions.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment manufacturing, in particular to a chamber and a plasma processing device. Background technique [0002] Plasma Enhanced Chemical Vapor Deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) is one of the important means of preparing thin films using plasma technology. It is a method of ionizing the reaction gas with the help of plasma, so that the active substances such as free radicals and ions generated by the reaction gas produce chemical reactions in the gas phase or on the surface of the substrate, and finally deposit a thin film on the substrate. In PECVD devices, flat plate capacitive coupling discharge is widely used in semiconductor, photovoltaic and other industrial fields due to its advantages of large-area substrate support and good film growth uniformity. [0003] figure 1 It is an existing PECVD chamber structure. The PECVD chamber includes a uniform flow ch...

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Problems solved by technology

[0005] The present invention aims at the above-mentioned deficiencies existing in the prior art, and provides a chamber and a plasma processing device to solve the problem of discharge in the uniform flow chamber

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