Anti-damping boron-doped battery component and production method thereof

Abstract

The invention discloses an anti-damping boron-doped battery component and a production method thereof. The method comprises the following steps: laminating a battery string, glass, EVA and a rear panel, and then performing pre-laminating on a laminated structure; applying forward bias to an electrode of the laminated structure; laminating the laminated structure, and applying forward bias to the laminated structure in a laminating process; cooling down the laminated structure to 80 to 120 DEG C after laminating is finished; illuminating the laminated structure at 80 to 120 DEG C, and meanwhileapplying forward bias to the electrode of the laminated structure; finally cooling down the laminated structure to a temperature required by the technology, discharging the laminated structure, and performing the next process. The method sufficiently utilizes all process heat histories of a illuminating process during injection of a non-equilibrium carrier, reduces and inhibits light degradationof a crystalline silicon solar component, meanwhile further integrates electric injection and light injection processes after the component is laminated, is simple and convenient in the whole technical process and beneficial to realizing of industrial production, and further reduces the manufacture cost of the whole component.

Description

technical field [0001] The invention belongs to the technical field of solar photovoltaic components, and in particular relates to an anti-decay boron-doped battery component and a production method thereof. Background technique [0002] At present, boron-doped P-type silicon wafers are widely used in crystalline silicon solar cell components. When the solar cells made of boron-doped P-type silicon wafers are exposed to sunlight, the performance of the cells will attenuate and finally reach a stable value of cell performance. This phenomenon is usually called light-induced attenuation. According to relevant research reports, the efficiency decay rate of single crystal boron-doped all-aluminum back field conventional single crystal silicon cells is 2-3%, and the efficiency decay rate of single crystal boron-doped single crystal PERC cells is 3-5%. The attenuation mechanism is generally believed to be due to the existence of boron-oxygen bonds and other recombination centers....

AI Technical Summary

Problems solved by technology

[0011] In order to solve the problems existing in the prior art, the object of the present invention is to solve the technical problem of incompatibility between the electric injection process and the lamination process in the lamination re-implantation process in the prior art, and provide an anti-attenuation boron-doped battery assembly and its In the production method, the present invention realizes the perfect combination of lamination process, electric injection and light injection through the combination of new lamination process steps and electric injection and light injection processes, which suppresses the light-induced attenuation of boron-doped components and does not affect the The production capacity of the laminator reduces the cost of component manufacturing and facilitates the large-scale promotion of the production line