Infrared detector and manufacturing method thereof

A technology of infrared detector and manufacturing method, applied in the direction of final product manufacturing, sustainable manufacturing/processing, electric solid device, etc., can solve problems such as splicing boundary pattern distortion, avoid short circuit or open circuit, improve stability and reliability , The effect of reducing the alignment (register) error
CN108565310AActive Publication Date: 2018-09-21SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
Publication Date
2018-09-21

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Abstract

The invention discloses an infrared detector and a manufacturing method thereof. The infrared detector comprises an image pixel array region; a non-image-pixel region which surrounds the image pixel array region; a photoetching shot spacing region which surrounds the image pixel array region and is arranged between the image pixel array region and the non-image-pixel region and comprises multipleelectrical connection regions of which each comprises a first metal connection layer and a first reflection connection layer which is arranged on the light incident side of the first metal connectionlayer, wherein the image pixel array region and the non-image-pixel region arranged on the two sides of the electrical connection regions are electrically connected through the first metal connectionlayer and the first reflection connection layer; and multiple photoetching graph placing regions which are arranged among multiple electrical connection regions. According to the splicing technical scheme used by the structure of the infrared detector, the problems of graph distortion of the splicing boundary in the splicing process can be solved in the manufacturing process of the infrared imaging detector used by large array imaging so that the performance of the product can be enhanced.
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Description

technical field

[0001] The invention relates to the field of semiconductors, in particular to an infrared detector and a manufacturing method thereof. Background technique

[0002] Micro Electro Mechanical Systems (MEMS) technology has many advantages such as tiny, intelligent, executable, integrable, good process compatibility, and low cost, so it has been widely used in many fields including the field of infrared detection technology. Infrared detector is a specific microelectromechanical system MEMS product in the field of infrared detection technology. It uses sensitive material detection layers such as amorphous silicon or vanadium oxide to absorb infrared light, thereby causing changes in its resistance, and thereby realizing thermal imaging functions. .

[0003] Since the manufacturing process of the detector is generally not compatible with the manufacturing process of the CMOS semiconductor device, it is difficult to realize mass production of the detector. Howeve...

Claims

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