PUF eigenvalue generation method and device with PUF

A technology of eigenvalues ​​and devices, applied in the field of information security, can solve the problems of single structure, high repeatability and high identifiability, and achieve the effect of high concealment

Active Publication Date: 2018-11-23
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, the PUF generation circuit in Static Random Access Memory (SRAM) is a circuit with a single structure and high repeatability, which is highly identifiable and is very unfavorable

Method used

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  • PUF eigenvalue generation method and device with PUF
  • PUF eigenvalue generation method and device with PUF
  • PUF eigenvalue generation method and device with PUF

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Embodiment Construction

[0026] As mentioned in the background technology section, for a device, in addition to requiring uniqueness, fixity and high yield, it is also required to have a high Concealment. However, in the prior art, the concealment of the device when generating PUF feature values ​​needs to be improved urgently.

[0027] The present invention proposes a method for generating PUF eigenvalues. By using the voltage values ​​of N voltage nodes that change with changes in process factors in the device as the basic characteristics for generating PUF eigenvalues, the performance of the device when generating PUF eigenvalues ​​is improved. Concealment.

[0028] In order to make the above objects, features and beneficial effects of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0029] see also figure 1 and figure 2 A method for generating a PUF feature value accordin...

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Abstract

The invention discloses a PUF eigenvalue generation method and a device with PUF. The PUF eigenvalue generation method comprises the steps of providing the device, wherein the device comprises N voltage nodes, N is a positive integer, and voltage values of the N voltage nodes are changed along with the change of technological factors; detecting the voltage values of the N voltage nodes to determine detection results of the voltage nodes; and generating a PUF eigenvalue according to the detection results of the N voltage nodes. By the adoption of the technical scheme, the device has relativelyhigh invisibility when the PUF eigenvalue is generated.

Description

technical field [0001] The invention relates to the technical field of information security, in particular to a method for generating PUF characteristic values ​​and a device with PUF. Background technique [0002] Physically Unclonable Function (Physically Unclonable Function, referred to as PUF) has the characteristics of uniqueness and non-replication. It has been successfully applied in the field of information security and is a safe and effective encryption technology. The private key (referred to as the key) calculated by using the PUF characteristic value of the device (such as a chip) is the best key for identifying a device. When the device is manufactured, the uncontrollable randomness in the process, such as the noise and unevenness in the sputtering and exposure process, because this randomness is uncontrollable, the device has random and unique characteristics. Although the characteristics that arise in the above process cannot be predetermined or controlled, i...

Claims

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Application Information

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IPC IPC(8): G06F21/73
CPCG06F21/73H04L9/3278
Inventor 黄正太杨家奇黄正乙陈萍
Owner SEMICON MFG INT (SHANGHAI) CORP
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