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Imaging sensor pixels and systems

An imaging sensor and pixel technology, applied in the field of CMOS image sensors, can solve the problems of reducing distance, the possibility and magnitude of optical crosstalk and electrical crosstalk of photosensitive elements and the like

Active Publication Date: 2019-09-27
OMNIVISION TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Miniaturization of image sensors can result in reduced distance between adjacent photosensitive elements
As the distance between photosensitive elements decreases, the likelihood and magnitude of optical and electrical crosstalk between photosensitive elements may increase

Method used

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  • Imaging sensor pixels and systems
  • Imaging sensor pixels and systems
  • Imaging sensor pixels and systems

Examples

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Embodiment Construction

[0011] Examples of apparatus and methods for image sensors with improved crosstalk are described herein. In the following description, numerous specific details are set forth in order to provide a thorough understanding of examples. One skilled in the relevant art will recognize, however, that the techniques described herein may be practiced without one or more of these specific details or may be practiced with other methods, components, materials, etc. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring certain aspects.

[0012] Reference throughout this specification to "one example" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the example is included in at least one example of the present invention. Thus, appearances of the phrase "in one instance" or "in one embodiment" in various places throughout this specification are not necessarily ...

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Abstract

An imaging sensor pixel comprises a highly resistive N− doped semiconductor layer with a front side and a back side. At the front side, there are at least a light sensing region, a transfer gate adjacent to the light sensing region and a P-well region. The P-well region surrounds the light sensing region and the transfer gate region, and comprises at least a floating diffusion region and a first electrode outside of the floating diffusion region, wherein a first negative voltage is applied to the first electrode. The transfer gate couples between the light sensing region and the floating diffusion region. At the back side, there is a back side P+ doped layer comprising a second electrode formed on the back side P+ doped layer, wherein a second negative voltage is applied to the second electrode. The second negative voltage is more negative than the first negative voltage.

Description

technical field [0001] The present invention relates generally to semiconductor image sensors, and particularly, but not exclusively, to CMOS image sensors with reduced crosstalk. Background technique [0002] Image sensors have become ubiquitous. It is widely used in digital still cameras, cellular phones, security cameras, as well as in medical, automotive and other applications. A typical image sensor operates as follows. Image light from an external scene is incident on the image sensor. An image sensor includes a plurality of photosensitive elements such that each photosensitive element absorbs a portion of incident image light. Each photosensitive element (eg, a photodiode) included in an image sensor generates image charges upon absorbing image light. The amount of generated image charge is proportional to the intensity of image light. The resulting image charge can be used to generate an image representative of the external scene. [0003] Due to increasing dem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
Inventor 马渕圭司真锅宗平毛杜立
Owner OMNIVISION TECH INC