Method and device improving SSD read-retry efficiency and computer device

Abstract

The invention relates to a method and device for improving SSD read-retry efficiency and a computer device. The method comprises classifying word lines in an erasing unit according to different positions.; obtaining a effective retry level value and storing the effective retry level value. Through classification of the word lines inside the erasing unit according to different positions, the distribution similarity of the retry level is refined to the word line level. When the retry level value of the word line at a certain position is effective, the memory cells on other word lines in the sameerase cell can refer to the effective retry level value, the accuracy is high, the efficiency of reading and retrying is improved, and the overall reading performance of the solid state disk is improved.

Description

technical field [0001] The present invention relates to a read retry method of a solid state disk, and more specifically refers to a method, a device and a computer device for improving the read retry efficiency of an SSD. Background technique [0002] The structure of Nand Flash is as follows figure 1 As shown, DIE is an independently operable unit, including a plurality of erasing units (i.e. Block); the erasing unit includes a plurality of reading and writing units (i.e. Page); the logical and physical structure of the erasing unit is as follows figure 2 As shown, it can be seen from the physical structure that each erasing unit is controlled by a word line, and each row controlled by a word line forms a read and write unit. Generally speaking, there are 256 erasing units in the SLC mode. Read and write unit. [0003] Due to the physical characteristics of Nand Flash particles, after repeated reading, writing and erasing operations, the possibility of reading errors wi...

AI Technical Summary

Problems solved by technology

When the erase unit or other erase units with retry level distribution consistency enter the read retry process, the effective level value can be directly obtained from the saved table for use, thereby improving the efficiency of reading, but because the erase unit The retry level distribution of different internal reading and writing units is not consistent, so the effective level value of one erasing unit is often not applicable to other erasing units, nor is it applicable to each reading and writing unit of this erasing unit, resulting in This time the read retry failed and the retry level was traversed again, resulting in an insignificant improvement in the overall read performance

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