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Semiconductor device

A semiconductor and substrate technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as device performance degradation and yield degradation

Active Publication Date: 2018-12-07
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the separation process may cause various types of mechanical damage (eg, cracking, delamination, etc.) to one or more epitaxially grown III-V compound semiconductor films per grain, which in turn degrades yield and / or performance degradation of devices already formed on the die

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

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Embodiment Construction

[0008] The following disclosure sets forth various exemplary embodiments for implementing different features of the subject matter. Specific examples of components and configurations are set forth below to simplify the summary of this disclosure. Of course these components and configurations are examples only and are not intended to be limiting. For example, the description below that a first feature is formed "on" a second feature or "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which the first feature is formed in direct contact. Embodiments where an additional feature may be formed between a feature and a second feature such that the first feature may not be in direct contact with the second feature. Additionally, this disclosure may repeat reference numbers and / or letters in various instances. Such re-use is for brevity and clarity and does not itself indicate a relat...

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PUM

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Abstract

A semiconductor device includes a substrate, overlaid by a III-V compound semiconductor layer. The substrate includes a circuit region and a seal ring region, wherein the seal ring region surrounds the circuit region. A seal ring structure is disposed in the seal ring region, wherein the seal ring structure includes a first via structure, extending through part of the substrate and the III-V compound semiconductor layer, that surrounds the circuit region.

Description

Background technique [0001] III / V compound semiconductors (commonly referred to as III-V compound semiconductors) have been extensively studied in recent years because of their promising application prospects in electronic and optoelectronic devices. The large energy bandgap and high electron saturation velocity of such Group III-V compound semiconductors make them excellent candidates for use in high temperature, high rate, and / or high power electronic / optoelectronic applications. Various examples of electronic devices employing such III-V compound semiconductors include high electron mobility transistors (HEMTs) and other heterojunction bipolar transistors. Various examples of optoelectronic devices employing such group III-V compound semiconductors include blue light emitting diodes (LEDs), laser diodes, and ultraviolet (UV) photodetectors. [0002] Typically, such devices are formed on one or more epitaxially grown III-V compound semiconductor (e.g., potassium nitride (Ga...

Claims

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Application Information

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IPC IPC(8): H01L23/00H01L23/498
CPCH01L23/49827H01L23/562H01L29/7786H01L29/2003H01L23/3192H01L29/0607H01L23/481H01L21/76898
Inventor 张铭宏褚伯韬王升平郭建利陈仲诚
Owner TAIWAN SEMICON MFG CO LTD