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A device and method for laser-assisted zinc oxide growth based on lithium niobate wafer

A laser-assisted lithium niobate technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of time-consuming, complicated and expensive equipment, cumbersome steps of growing zinc oxide, etc., and achieve cost reduction, Easy to build effects

Inactive Publication Date: 2021-01-22
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to propose a method with simple equipment, short time consumption, and control of the rod-shaped zinc oxide growth area and growth diameter in view of the current disadvantages of growing zinc oxide on the substrate, such as cumbersome steps, long time consumption, and complicated and expensive equipment.

Method used

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  • A device and method for laser-assisted zinc oxide growth based on lithium niobate wafer
  • A device and method for laser-assisted zinc oxide growth based on lithium niobate wafer
  • A device and method for laser-assisted zinc oxide growth based on lithium niobate wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044]Embodiment 1: The preparation process of zinc oxide growth on lithium niobate wafer.

[0045] Using a 455nm laser, the laser power is 1.2W, and the magnification of the convex lens is 4 times. The lithium niobate sheet is C-cut lithium niobate sheet, and the absorption coefficient is 5cm. -1 .

[0046] In the first step, the cleaned lithium niobate wafer is fixed to the polytetrafluoroethylene container with screws in the order of rubber gasket, lithium niobate wafer, rubber gasket, and perforated polytetrafluoroethylene plate.

[0047] In the second step, 0.5268g of zinc acetate and 0.3364g of hexamethylenetetramine were dissolved in 40ml of deionized water.

[0048] In the third step, the prepared solution was magnetically stirred at room temperature for 5 minutes to fully dissolve it, and then poured into a polytetrafluoroethylene container.

[0049] The fourth step is to place the polytetrafluoroethylene container containing the solution in the copper container; tu...

Embodiment 2

[0055] Embodiment 2: The preparation process of zinc oxide growth on lithium niobate wafer.

[0056] The difference between embodiment 2 and embodiment 1 is the type of lithium niobate wafer, embodiment 1 is a C-cut lithium niobate sheet, and embodiment 2 is a Y-cut lithium niobate sheet.

[0057] Using a 455nm laser, the laser power is 1.2W, the magnification of the convex lens is 4 times, the lithium niobate sheet is Y-cut lithium niobate sheet, and the absorption coefficient is 5cm -1 .

[0058] In the first step, the cleaned lithium niobate wafer is fixed to the polytetrafluoroethylene container with screws in the order of rubber gasket, lithium niobate wafer, rubber gasket, and perforated polytetrafluoroethylene plate.

[0059] In the second step, 0.5268g of zinc acetate and 0.3364g of hexamethylenetetramine were dissolved in 40ml of deionized water.

[0060] In the third step, the prepared solution was magnetically stirred at room temperature for 5 minutes to fully dis...

Embodiment 3

[0065] Embodiment 3: The process of controlling the growth diameter of rod-shaped zinc oxide on a lithium niobate wafer.

[0066] The difference between Embodiment 3 and Embodiment 1 is that the power of the laser is different.

[0067] Using a 455nm laser, the laser power is 0.9W, and the magnification of the convex lens is 4 times. The lithium niobate sheet is C-cut lithium niobate sheet, and the absorption coefficient is 5cm. -1 .

[0068] In the first step, the cleaned lithium niobate wafer is fixed to the polytetrafluoroethylene container with screws in the order of rubber gasket, lithium niobate wafer, rubber gasket, and perforated polytetrafluoroethylene plate.

[0069] In the second step, 0.5268g of zinc acetate and 0.3364g of hexamethylenetetramine were dissolved in 40ml of deionized water.

[0070] In the third step, the prepared solution was magnetically stirred at room temperature for 5 minutes to fully dissolve it, and then poured into a polytetrafluoroethylene ...

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Abstract

The invention provides a laser-assisted zinc oxide growth device and method based on a lithium niobate wafer. The device comprises a laser 1, a convex lens 2, a copper container 3, a resistance heating rod 4, a temperature controller 5, a polytetrafluoroethylene container 6, a thermoelectric couple 7 and the lithium niobate wafer 8. The device mainly comprises a focusing light path, the polytetrafluoroethylene container and a temperature control system, the focusing laser irradiates the lithium niobate wafer to generate photovoltaic effect, and zinc oxide is grown in special area of the lithium niobate wafer by combining a chemical synthesis method. According to the method, zinc oxide growth time is shortened, growth positions can be accurately adjusted, and rod-shaped zinc oxide with different diameters can be acquired by controlling power of lasers.

Description

technical field [0001] The invention belongs to the field of semiconductor composite materials, and relates to a device and method for laser-assisted zinc oxide growth based on a lithium niobate wafer. Background technique [0002] Lithium niobate crystal has remarkable electro-optic, ferroelectric, piezoelectric, nonlinear, photorefractive effects, etc., and has broad application prospects as a substrate material in the field of semiconductor composite materials such as biomedical laboratory chips and integrated optical devices. [0003] Zinc oxide has excellent photoelectric, piezoelectric, thermoelectric and catalytic properties, and is widely used in solar cells, gas sensors, piezoresistors, surface acoustic waves and other devices. [0004] In 2007, Liu (Photocatalytic nanoparticle deposition on LiNbO3nanodomain patterns via photovoltaic effect[J].Appl.Phys.Lett, 91, 044101, 2007.) et al made selective deposition of silver nanoparticles onto lithium niobate positive thr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/40C23C16/48C23C16/52
CPCC23C16/407C23C16/483C23C16/52
Inventor 阎文博梁超任满意李菲菲昝知韬
Owner HEBEI UNIV OF TECH
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