Automatic compensation method for diameter of czochralski silicon monocrystalline

Abstract

The invention discloses an automatic compensation method for the diameter of czochralski silicon monocrystalline, in particular to an automatic compensation method for controlling the tail diameter of the monocrystalline silicon in the growing process of the czochralski silicon monocrystalline.The method has the key point that when the liquid level of fused silicon reaches the intersecting line of the vertical surface and the curved surface of the inner wall of a crucible, an automatic compensation program II is started to control the growth of the monocrystalline silicon.The method comprisesthe following steps: first, a control program automatically calculates an initial compensation point, a compensating parameter controller calculates the compensating parameters according to the diameter of the monocrystalline silicon and the diameter of the crucible, a PID controller integrates and calculates the diameter of the monocrystalline silicon and the compensating parameter signals and acts on a monocrystalline silicon lifting speed controller and a crucible heater, and by adjusting the crystal lifting speed and the crucible heating power, the diameter of the monocrystalline silicon is controlled. The method can achieve the purpose of accurately controlling the tail diameter of the monocrystalline silicon.

Description

technical field [0001] The invention relates to an automatic compensation method for the diameter of a Czochralski silicon single crystal, in particular to an automatic compensation method for controlling the tail diameter of a single crystal silicon during the growth process of a Czochralski silicon single crystal. Background technique [0002] Czochralski pulling silicon single crystal is currently the most widely used technology for producing single crystal silicon. In the Czochralski process, high-purity polysilicon is loaded into a quartz crucible, and the quartz crucible is heated by a surrounding coil or a current heater loaded with high-frequency waves. to melt the polysilicon. Then, a silicon single crystal (called a seed crystal) with a specific crystal orientation is brought into contact with molten silicon, and silicon will form on the solid-liquid interface along the arrangement structure of silicon atoms on the seed crystal with a known crystal orientation at a...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide an automatic compensation method for the diameter of Czochralski silicon single crystal to solve the problem of the crystal tail diameter refinement in the later stage of Czochralski silicon single crystal growth

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