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Conductive layer insulation method, conductive layer insulation structure and display device

A technology of insulating structure and conductive layer, applied in nonlinear optics, instruments, optics, etc., can solve problems such as product scrapping, device leakage, copper ion diffusion, etc.

Inactive Publication Date: 2019-01-04
HKC CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, because copper ions are highly active and easily oxidized, there will be a problem of copper ion diffusion, which will cause the active layer of the switching element in the array process to be polluted by copper ions, and then device leakage will occur, causing the product to be scrapped.

Method used

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  • Conductive layer insulation method, conductive layer insulation structure and display device
  • Conductive layer insulation method, conductive layer insulation structure and display device
  • Conductive layer insulation method, conductive layer insulation structure and display device

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Embodiment Construction

[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Apparently, the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0028] It should be understood that when used in this specification and the appended claims, the terms "comprising" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude one or Presence or addition of multiple other features, integers, steps, operations, elements, components and / or collections thereof.

[0029] Please refer to figure 1 , which is a schematic flowchart of a method for insul...

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Abstract

The embodiment of the invention provides a conductive layer insulation method, a conductive layer insulation structure and a display device. The method comprises the following steps: forming a conductive layer above a substrate, wherein the conductive layer comprises a scanning line and a grid electrode of a switching element; forming a first insulating layer to cover the upper portion of the conductive layer; forming a second insulating layer to cover the upper portion of the first insulating layer, wherein an active layer is arranged right above a part of the second insulating layer corresponding to the grid electrode, wherein the density of the first insulating layer is greater than the density of the second insulating layer. According to the embodiment of the invention, metal ions in the conductive layer can be effectively prevented from diffusing to the active layer connected with the second insulating layer, so that the phenomenon of electric leakage is effectively avoided.

Description

technical field [0001] The invention relates to the technical field of liquid crystal display, in particular to a conductive layer insulation method, a conductive layer insulation structure and a display device. Background technique [0002] Thin film transistor-liquid crystal display (TFT-LCD) has the advantages of high image quality, thinness, low power consumption, and no radiation, and has gradually become the mainstream of display devices. With the development of TFT-LCDs towards ultra-large size, high driving frequency, and high resolution, the production of TFT-LCDs requires higher and higher quality requirements for wire process technology. [0003] In order to meet the development requirements of high-frequency and high-resolution liquid crystal display specifications in the future, copper metal with lower resistance characteristics is usually used as the wire material instead of aluminum alloy or pure aluminum wire. However, since copper ions are highly active and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1362G02F1/1368
CPCG02F1/1362G02F1/136286G02F1/1368
Inventor 黄北洲
Owner HKC CORP LTD