A Cutting Method for Improving Wafer Edge Warpage
A technology of edge warping and cutting method, which is applied in the direction of fine working devices, manufacturing tools, stone processing equipment, etc., can solve the problems of difficult edge warping, difficult precise positioning, and reduced cutting ability, so as to ensure the cutting effect, Reduce the probability of contact with mortar and optimize the effect of structure
Active Publication Date: 2020-11-13
上海中欣晶圆半导体科技有限公司 +1
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Problems solved by technology
It is difficult to accurately locate the knife edge when the steel wire just touches the crystal ingot, so the warpage is generally too large when the steel wire just cuts into the crystal ingot, and the increase of flow rate will cause line marks, and the flow rate is too small to ensure normal cutting
At the end of the ingot processing, impurities such as silicon shavings cut from the mortar affect the cutting level of the mortar. In addition, the existence of the resin plate leads to a decrease in cutting ability, and increasing the flow at the ingot will lead to slivers. Therefore, the out of the knife, Edge warping caused by cutting edge has always been a problem in the industry
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[0048] The present invention will be further described below in conjunction with the accompanying drawings.
[0049] see figure 1 , a cutting method to improve the edge warping of silicon wafers. At the position where the cutting depth is 0mm-8mm, the flow rate of the mortar is always kept constant, and the flow rate of the mortar is 70L / min;
[0050] When the cutting depth is 8mm-18mm, the flow rate of the mortar increases linearly, and the flow rate of the mortar is (cutting depth value + 62) L / min;
[0051] When the cutting depth is 18mm-98mm, the mortar flow rate is 80L / min;
[0052] When the cutting depth is 98mm, the mortar flow rate is 80L / min; when the cutting depth is 98mm to 100mm, the mortar flow rate gradually decreases from 80L / min to 79.5L / min;
[0053] When the cutting depth is 100mm, the mortar flow rate is 79.5L / min; when the cutting depth is 100mm to 102mm, the mortar flow rate gradually decreases from 79.5L / min to 78.5L / min;
[0054] When the cutting dept...
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Abstract
The invention relates to the technical field of semiconductor processing, and discloses a cutting method for improving edge warpage of a silicon wafer. In a portion with the cutting depth of 0-8 mm, the flow of mortar is 68-70 L / min; in a portion with the cutting depth of 8-18 mm, the flow of the mortar linearly decreases and is (2* cutting depth value +52) L / min; in a portion with the cutting depth of 18-98 mm, the flow of the mortar is 80 L / min; in a portion with the cutting depth of 98-122 mm, the flow of the mortar sequentially and gradually decreases from 80 L / min to 61 L / min; in a portion with the cutting depth of (122-A) mm, the flow of the mortar is 61 L / min, wherein A is the maximum outer diameter value of crystal bars and is within 128-132 mm. According to the method, by optimizing the flow of the mortar at different cutting depths, the edge warpage problem of the silicon wafer is obviously solved.
Description
technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a method for cutting silicon wafers. Background technique [0002] Silicon wafer multi-wire cutting technology is a relatively advanced silicon wafer processing technology in the world at present. Its basic principle is to drive the cutting mortar attached to the steel wire to rub the silicon rod through the high-speed moving steel wire, so as to achieve the precision of cutting crystal rod. Effect. [0003] Defective warpage is the item that affects the overall yield the most. As confirmed by previous data, the position of large warpage is mainly concentrated at the entry and exit positions of the silicon wafer. How to improve the warpage at the entry and exit positions of the silicon wafer is one of the problems that need to be overcome urgently in the current cutting process. It is difficult to precisely locate the knife edge when the steel wire just touche...
Claims
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IPC IPC(8): B28D5/04B28D7/00
CPCB28D5/007B28D5/042
Inventor 卢运增贺贤汉丁晓健
Owner 上海中欣晶圆半导体科技有限公司