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A nano-patterning system and method for rotary near-field lithography

A processing method and nano-patterning technology, applied in the field of nano-processing, can solve the problems of low aspect ratio and poor pattern quality of nano-pattern processing, and achieve the effects of low-quality nano-pattern processing, improved strength and distribution, and low cost.

Active Publication Date: 2022-05-20
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Description
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Problems solved by technology

[0006] The purpose of the present invention is to provide a nano-pattern processing system and method for rotary near-field lithography to solve the problems of low aspect ratio and poor graphic quality in the processing of nano-patterns in the rotary field

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  • A nano-patterning system and method for rotary near-field lithography

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Embodiment Construction

[0044] The following describes the embodiments of the present invention in detail, and those skilled in the art will understand that the following embodiments are intended to explain the present invention, and should not be regarded as limiting the present invention. Unless otherwise specified, if the specific techniques or conditions are not clearly described in the following examples, those skilled in the art can carry out according to the commonly used techniques or conditions in this field or according to the product instructions. The reagents or instruments used were not indicated by the manufacturer, and they were all conventional products available in the market.

[0045] The present invention is a nano-pattern processing method for rotary near-field lithography, specifically comprising the following steps:

[0046] (1) First select the circular disc substrate material, the present embodiment selects the aluminum alloy disc as the substrate, such as figure 1 shown;

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Abstract

The invention discloses a nano pattern processing system and method for rotary near-field lithography. First, a surface plasmon lens for beaming incident light is prepared on the surface of the photoetching head, and then a metal reflective layer is sputtered on the surface of the disc substrate, and a photoresist photosensitive layer is prepared on the surface of the metal reflective layer. Using the hard disk flight principle, a stable flight gap below 20nm is formed between the photoetching head and the photoresist disc. Utilizing the reflection compensation function of the metal reflective film layer, the intensity and distribution characteristics of the surface plasmon beamforming light field are improved, and the energy attenuation of the surface plasmon in the lithography direction is compensated, thereby improving the performance of the rotary near-field lithography system The processing structure has an aspect ratio and good steepness, realizing high-efficiency, high-resolution, and low-cost nanofabrication.

Description

technical field [0001] The invention belongs to the technical field of nano-processing, and relates to a nano-pattern processing system and method for rotary near-field lithography. Background technique [0002] Photolithography has become the most important nano-manufacturing technology because of its high-efficiency processing of nano-scale fine structures, and it is used in large-scale integrated circuits, micro-electro-mechanical systems, and data storage. With the advancement of nanofabrication technology, improving the resolution of processed structures will be the development trend of next-generation lithography technology. At present, the methods that can realize the processing capacity below 10nm mainly include: optical immersion exposure, extreme ultraviolet exposure, multiple exposure, interference exposure, etc. However, high equipment manufacturing costs and limited processing structures restrict the application of these high-resolution nano-manufacturing techn...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00G03F7/20B82Y40/00
CPCG03F7/0002G03F7/2004G03F7/2049B82Y40/00
Inventor 纪佳馨徐鹏飞吴宝贵李静
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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