5results about How to "Aspect ratio height" patented technology

The invention relates to the technical field of photoelectric devices, and discloses an optical engine packaging structure and a preparation method thereof. The structure comprises an adapter plate structure, an electrical module, a first rewiring layer, an optical module and a packaging substrate, a containing space of the adapter plate structure comprises at least part of the thickness of the adapter plate structure, and a conductive structure is arranged in a penetrating mode in the thickness direction; the electrical module is arranged in the accommodating space and the front surface of the electrical module is exposed; the first redistribution layer is arranged on the adapter plate structure and is electrically communicated with the conductive structure and the electrical module; the optical module is arranged on the first rewiring layer, the front side faces the first rewiring layer, and an optical port is exposed to the external space and connected with an external optical device; the packaging substrate is arranged on the back surface of the adapter plate structure and is suitable for being electrically connected with the electrical module. According to the invention, the optical module is stacked on the electrical module, so that the warping is reduced, the signal transmission is improved, the packaging size is reduced, and the process is simple.

A method of fabricating a semiconductor is described herein. The implant mask formation techniques mentioned in the method of fabrication include increasing an initial aspect ratio of a pattern in an implant mask through non-lithography techniques, which can include forming a hardening resistant layer on the implant mask. The pattern can be formed to an initial aspect ratio through optical lithography techniques that reduce or minimize the likelihood of the pattern collapsing during pattern formation. Next, a hardening resistant layer is formed on the implant mask to increase the height of the pattern and reduce the width of the pattern, which increases the aspect ratio between the height of the opening or trench of the pattern and the width of the opening or trench. In this way, the pattern in the implant mask can be formed to an ultra-high aspect ratio in a manner that reduces or minimizes the likelihood of the pattern collapsing during pattern formation.

The present application relates to a kind of low-pressure laser welding method applied to microstructure small diameter closed weld, comprising: fuel medium transmission part is assembled with oxidant medium transmission part, and laser welding dot positioning and fixed after;Laser probe is selected coordinate point along weld circumference, and weld path is fitted by interpolation calculation method, laser emitter is operated, so that laser point movement path coincides with weld, and working path is determined;Laser emitter rotates to starting point of arc with varying process parameters along the starting point of arc, and closed weld welding is completed, during weld welding process: based on the penetration of product, laser power and working distance are set, power P=300×Hd, starting point of arc working distance, i.e. H1 It is Δ0±0.2mm, and the working distance H2 of arc position is Δ0+5mm.The present application solves the problem that traditional laser welding cannot guarantee the penetration of microstructure small diameter closed weld and the smaller welding deformation amount.

The present disclosure provides a semiconductor structure and a forming method thereof, and relates to the technical field of semiconductor. The forming method of the semiconductor structure comprises the following steps: providing a substrate; forming a plurality of multilayer stacked distributed capacitor structures on the surface of the substrate, each of the capacitor structures comprises a plurality of spaced distributed sub-capacitors, and the sub-capacitors in two adjacent capacitor structures correspond to each other one by one in a direction perpendicular to the substrate. Through the method, the capacitance storage capacity of the semiconductor structure can be improved, and the yield of the product can be improved.

The application relates to the technical field of laser micro-nano processing, and particularly provides a femtosecond laser processing system and method, wherein the femtosecond laser processing system comprises a laser emission module and a beam shaping module; the beam shaping module comprises a pulse separator, a spatial light modulator and a beam expander; the laser emission module, the pulse separator, the beam expander and the spatial light modulator are sequentially arranged; the laser emission module is used for emitting laser pulses; the laser pulses sequentially pass through the pulse separator and the beam expander and then reach the spatial light modulator; the pulse separator is used for splitting the laser pulses and introducing a pulse delay time between the split laser pulses; the beam expander is used for expanding the laser beam; and the spatial light modulator is used for shaping a Gaussian beam into a flat-top beam. The application has the effect of improving the processing quality of nanochannels on a grating surface.