164results about How to "Aspect ratio height" patented technology

The invention discloses a method for compositing a silver nanowire with a high length-width ratio, that is, through a one-time addition of silver salt to carry out reduction reaction, the silver nanowire with the average length of more than 52 micrometers and the average length-width ratio of more than 400 can be acquired. The method does not need to accurately control the adding velocity of reactant, the composited silver nanowire is good in dispersity and high in uniformity, compared with the traditional polyhydric alcohol method, the average length-width ratio of the silver nanowire is improved by more than 5 times, through the preparation of a flexible transparent conductive film on a transparent flexible plastic substrate, the visible light penetration rate is more than 90 %, and the square resistance is lower than 10 Omega/square. Compared with the traditional polyhydric alcohol method, the method provided by the invention is simple in technology control and high in repeatability, and is in favor of the batch production of the silver nanowire with the high length-width ratio.

The invention discloses a manufacturing method of a groove-type superjunction device. The manufacturing method comprises the following steps as follows: determining groove size parameters and the maximum value of a single-process depth; providing a substrate, and forming a first hard mask layer; defining a groove forming region; etching a bottom epitaxial layer to form a bottom groove; removing the first hard mask layer, epitaxially filling the bottom groove, and performing CMP; forming a zero layer aligning mark; forming a top epitaxial layer; forming a second hard mask layer; with the zero layer aligning mark as a aligning condition, defining the groove forming region; etching the top epitaxial layer to form a top groove; removing the second hard mask layer, epitaxially filling the top groove, and performing CMP; checking whether the depth of a laminated superjunction structure reaches a required depth, if so, ending the manufacturing method, otherwise, repeating the top superjunction structure forming step. By the manufacturing method, reverse breakdown voltage of a superjunction device can be increased, the conduction resistance can be reduced, the existing equipment and the existing process can be utilized to the maximum extent.

The present invention relates to a carbon nano tube array, its preparation method and application in preparation of optical frequency dipole antenna array. The invented carbon nano tube optical frequency dipole antenna array is characterized by that the carbon nano tubes are perpendicular to the substrate material and arranged, the length and diameter ratio of carbon nano tube of fibre is greater then 10. The method for making the carbon nano tube array is characterized by that it uses transition metal film catalyst to regulate its thickness, and utilizes plasma chemical gas phase deposition system to regulate plasma energy density and distribution, controls reaction time, gas pressure and gas flow speed ratio so as to implement large-area perpendicular growth of carbon nano tube or fibre array on various substrates at lower temperature and accurately control length and diameter of produced carbon nano tube or fibre.

The present invention relates to one kind of surfactant for magnesium alloy TIG welding and its preparation process and usage, and belongs to the field of metal material welding technology. The surfactant consists of CdCl2 and/or ZnCl2 40-60 wt%, Cr2O3 15-25 wt%, TiO2 15-25 wt% and SiO2 for the rest. Its preparation process includes mixing the materials and the subsequent ball milling for 2-4 hr. When the surfactant is used, it is first mixed with acetone and/or alcohol to form slurry for easy applying and then spread to the surface of weld pass in the amount of 1-6 mg/sq cm, and after the coating is dried, TIG welding is performed. The surfactant can ensure the welding seam quality, obviously increase fusion depth of the welding seam, simplify the welding process, raise welding efficiency, and lower production efficiency.

The invention discloses an active coating welding wire for carbon dioxide gas arc welding and a preparation method thereof. A wire rod is scored in a horizontal direction and a vertical direction, then the wire rod passes through a wire drawing die added with an active agent, the active agent is compounded with the wire rod, and the wire rod is enable to reaches the corresponding required size through drawing. The active coating welding wire and the preparation method have the advantages that H08A steel is used as the main raw material of the welding wire, so the manufacture cost is low; the production process is simple; and the surface of the welding wire is added with the active agent, so the conductivity and the wire feeding stability are ensured, meanwhile, the forming of weld joints is ensurimproved, the spattering of the welding wire in the welding process is reduced, and the forming effect is good.

The invention provides a titanium alloy welding active agent and a welding method, which is suitable for welding titanium alloy such as TC4. The trademark of the titanium alloy welding active agent is A-TIG-Ti-01, and the titanium alloy welding active agent consists of CaF2, MgF2 and SrF2; the mass content of the CaF2 is 15 to 25 percent; the mass content of the MgF2 is 5 to 15 percent; the mass content of the SrF2 is the residual amount. By adopting the titanium alloy welding active agent, the welding melting depth of the titanium alloy can be increased, the connector performance is excellent, and the titanium alloy welding active agent is suitable for welding a titanium alloy plane structure and a titanium alloy curved structure.

The invention discloses a method for efficiently electroplating and filling silicon-based TSV. The method specifically comprises the steps of etching and preparing the TSV on a wafer; preparing an insulating layer on the wafer for etching the TSV; preparing a seed layer on the wafer containing the insulating layer; enabling dry films to the adhered to the two surfaces of the wafer, and performing single-surface photoetching and developing; removing the seed layer from the TSV side wall port position; enabling the dry film to be adhered to the patterned surface and developing the other surface; removing the seed layer from the other port position again; then performing photoetching and developing again; next, performing bisynchronous electroplate copper filling to enable TSV-Cu and TSV-pad to be integrally molded without a separating interface; and removing the dry films, the photoresist and the seed layers. According to the method, the TSV through hole electroplating filling process is converted into two blind-hole-like electroplating filling processes, so that the TSV structure can be firmly combined; the process is more flexible and convenient; the high-aspect-ratio TSV through hole electroplating filling difficulty is greatly lowered; and meanwhile, the electroplating efficiency is effectively improved, and the low-cost and efficient TSV preparation can be realized.

The invention belongs to micro manufacturing field, pointing to the deficiency of traditional method, the quasimolecule laser, integrated circuit producing and etching, electric chemical and scanning probe micro technology are integrated together into a new process method. The steps are: (1) produces micro probe array at first; (2) the base is fixed between the plane electrode and the micro probe array, generates the negative voltage, pours in the protection gas; (3) adds in voltage between the two polars after pouring the electrolyte liquid, at the same time, the quasimolecule laser are poured in to control the electrochemical reaction, completes the process. the correspondent device sets an electrochemical reaction room on the laser microprocess machine platform, it includes a laser air moving window, an inlet of protection air, a vacuum pump interface, an electrolyte liquid inlet, a microprobe array, a plane electrode, an assistant electrochemical reaction air inlet and the waste outlet. The invention can acquires microstructure with width-depth ratio 5-50, the character size 1-50 micro meter on the semiconductor base.

The invention relates to large-discharge electric submerged screw pump oil extracting equipment. Compared with the traditional electric submerged screw pump oil extracting equipment which belongs to a large-discharge series and also mainly comprises an underground motor, an underground rotating type mechanical drive device, an underground screw pump, and the like, the large-discharge electric submerged screw pump oil extracting equipment has the technical scheme key that the underground screw pump is connected with an underground multistage motor by the underground rotating type mechanical drive device; the screw pump is rigidly fixed on the sleeve pipe wall of an oil well by adopting the underground multistage motor with high torque output and vibration resistance, a drum-gear coupling with high torque output, vibration resistance and an opening type structure, a series combined stopping type bear joint and an underground rotating type mechanical drive device of a compensating type lubricating oil tank through an anchoring device; the problem of oil leakage of an oil pipe of a large-gradient well or a horizontal well is solved by adopting a hydraulic type oil pipe oil drainer; and the large discharge of the electric submerged screw pump is realized by the technical measures, and thus the invention can be used for the oil well with large-discharge (more than 200m<3>/d) on the electric submerged screw pump.

The invention discloses a connection method for thick plate TiNi alloy and titanium alloy dissimilar materials. The connection method comprises the following steps that a TiNi alloy is subjected to acid pickling to the specified thickness; abrasive paper is used for grinding welded end faces of the dissimilar materials till the welded end faces are level; the position between the butt-joint materials is filled with Nb bars, and a clamp is used for fixing the welding materials; and finally the clamp and the welding materials are fed into an electronic beam equipment vacuum chamber together, electronic beams deviate to one side of a titanium alloy for welding, and a welding joint high in strength and good in comprehensive mechanical performance is obtained. According to the welding method, cracks generated by thick plate TiNi alloy and titanium alloy welding are eliminated; forming of Ti2Ni and other brittle intermetallic compounds is hindered; structure distribution is uniform, and grains are finer; and the strength of extension of the scanning welding joint reaches 551 MPa, the joint toughness is good, good comprehensive performance is achieved, and large engineering significance is achieved.

The invention discloses a self-shielded flux-cored wire suitable for welding of TC4 titanium alloy. The wire comprises the following raw materials in percentage by mass: 79%-84% of titanium belt and 21%-16% of flux-cored powder; the titanium belt comprises the following components in percentage by mass: more than or equal to 99% of Ti, 0.003%-0.006% of Fe, C 0.012%-0.016%, less than or equal to 0.002% of N, less than or equal to 0.001% of H and less than or equal to 0.07% of O; and the flux-cored powder comprises the following components in percentage by mass: 18%-21% of Al powder, 12%-15% ofV powder, 11%-16% of rare earth fluoride, 22%-27% of magnesium fluoride, 10%-15% of calcium fluoride, 10%-14% of barium chloride and 1%-2% of carbon nanotubes. Compared with the prior art, the self-shielded flux-cored wire suitable for welding of TC4 titanium alloy has stable arc, good weld formation and high welding efficiency in the welding process.

The present invention discloses a deep Si etching method. The method comprises the steps of: providing a silicon wafer coated with a graphical mask layer, and etching the surface of the silicon waferwithout being coated with the mask layer to form an etching surface and a side wall basically perpendicular to the etching surface. The method further comprises repeated and circulated passivation step, first etching step and second etching step until a predetermined etching depth is obtained. With the increasing of the number of times of cycle periods, at least one of conditions (1)-(3) is met that: (1) the deposition time of the passivation step is increased with the increasing of the number of times of the cycle periods, (2) the plate electrode power in the second etching step is increasedwith the increasing of the number of times of the cycle periods, and (3) the air pressure in the second etching step is increased with the increasing of the number of times of the cycle periods.

A device and method for depositing a protective layer on a material during a plasma etching procedure in the course of fabricating semiconductor components, in particular in the course of fabricating DRAM chips, characterized in that the plasma(10) has at least one precursor(1) which, during the plasma etching procedure, together with a constituent of the plasma(10) at least partially forms a protective layer(2) on a planar region of the material(30) and, characterized by a means for feeding the at least one precursor(1) into the plasma(10), in which case, by means of the at least one precursor(1), during the plasma(10) etching procedure, together with a constituent of the plasma, a protective layer(2) can at least partially be deposited on a planar region of the material(30).

The invention relates to a power field-effect tube. The power field-effect tube comprises a substrate, an inverse substrate formed on the substrate, a grid groove formed inside the inverse substrate, a groove oxide deposited inside the grid groove, a polysilicon grid formed inside the grid groove and a source formed inside the inverse substrate and positioned on one side of the grid groove opening, wherein the grid groove consists of a first groove and a second groove which is positioned below and communicated with the first groove; and the width of the second groove is smaller than that of the first groove. By adoption of the grid groove, the deposition of groove oxide inside the grid groove is easier and the pinch-off is avoided; therefore, an engineer can increase the depth-to-width ratio of the grid groove when designing so that the power effect-field tube has greater breakdown voltage and higher switching speed.

The invention discloses a method for manufacturing a metal paraboloid-shaped two-dimensionally-focused X-ray combined refractor. The method comprises the following steps of: (1) manufacturing a primary lens of the metal paraboloid-shaped two-dimensionally-focused X-ray combined refractor; (2) manufacturing a secondary lens of the metal paraboloid-shaped two-dimensionally-focused X-ray combined refractor; and (3) assembling the metal paraboloid-shaped two-dimensionally-focused X-ray combined refractor, namely putting the manufactured primary lens and the manufactured secondary lens under a microscope, finding and clamping a clamping arm of the secondary lens, aligning embedded lens bodies of the secondary lens with square holes of the primary lens, making a first parabolic curve and a second parabolic curve orthogonal to each other and making n embedded lens bodies on the secondary lens corresponding to n square holes on the primary lens one to one, embedding, and lightly pressing to obtain the metal paraboloid-shaped two-dimensionally-focused X-ray combined refractor. By the method, the manufacturing process is high in precision; the optical axis of the obtained lens can be self-calibrated at high precision; and the focusing efficiency is high.

The invention provides a production process of AG (anti-glare) glass. The process comprises the following steps of smelting glass raw materials by utilizing a smelting furnace so as to form glass fluid; then enabling glass to be molded through a fusion tin chamber by using a float glass process to form an earlier-stage glass pane; then annealing the earlier-stage glass pane by utilizing an annealing chamber to form a finished glass pane; then cutting and edging the finished glass pane to make a glass template; then polishing the glass template; then washing the glass template; then making hardmasking film; then making an ultraviolet curing polymer layer; then making a model; then making a curing layer with the model; then demolding; then etching the glass template by using one of reactiveion etching or inductive coupling plasma etching or using both, wherein the etching speed of the hard masking film is lower than the etching speed of the glass template. Compared with the prior art,the production process of the AG glass can be used for high-efficiency and high-quality production of the AG glass, and the AG glass has excellent performance.

The invention discloses a method for preparing a large-size silicon pore array. The method comprises the steps as follows: firstly, selecting a p-type silicon substrate with low resistance rate, and depositing metal particles; secondly, carrying out anodic oxidation on the silicon substrate with the metal particles deposited on the surface in an oxidant-containing solution; and thirdly, obtaining the large-size silicon pore array of nanometer to micron dimension by controlling current density and corrosion time under constant current.

The invention relates to the technical fields of organic acid separation and whisker synthesis, in particular to a method for preparing an organic acid and a calcium sulfate whisker from organic acidcalcium salt by a hydrochloric acid method. The method is characterized by comprising the following steps: (1) taking organic acid calcium salt and hydrochloric acid as raw materials, mixing the organic acid calcium salt with hydrochloric acid to undergo a metathesis reaction to obtain a mixed solution which mainly contains the organic acid, the organic acid calcium salt, calcium chloride and hydrochloric acid; (2) performing solvent extraction on the obtained mixed solution by utilizing an organic solvent to obtain a raffinate and a supported organic phase (I), washing the supported organic phase (I) to obtain a supported organic phase (II), performing RP-extraction on the organic phase (II) to obtain an organic acid washing solution and a blank organic phase; and (3) concentrating or crystallizing the organic acid washing solution obtained in the step (2) to obtain an organic acid product, and reacting the raffinate obtained in the step (2) with sulfuric acid or sulfate to prepare the calcium sulfate whisker. The method has the advantages of zero waste, low cost, high length-diameter ratio of the prepared calcium sulfate whisker and the like.