The invention provides an atomic-scale
observation method for
electron beam
irradiation induced microdefect repair in a GaN material, and belongs to the technical field of material science and
electron microscopy. According to the method, through a
spherical aberration correction transmission
electron microscope (AC-TEM) technology, in combination with
focused ion beam (FIB)
sample preparation and accurate
electron beam irradiation control, atomic-scale real-time observation of the dynamic repair process of the microdefects in the GaN material is achieved. The method comprises the following specific steps: selecting a GaN
sample type and determining experimental parameters; preparing a sample by adopting FIB; installing the sample in an AC-TEM sample rod and adjusting the sample to a target observation
crystal face; aC-TEM parameters are optimized to ensure that a clear atomic image is obtained; generating a nano hole through FIB
irradiation, and observing the repairing process of the nano hole in real time; and dynamically and quantitatively analyzing the
defect repair by using
image analysis software. According to the method, the problem that the defect dynamic repair process cannot be captured in real time in a traditional method is solved, and an important experimental means and theoretical support are provided for researching a defect evolution mechanism and performance optimization of a GaN material.