Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Spin polarized channel atomic force microtechnic

A technique of atomic force microscopy and spin polarization, which is applied in the field of ultra-high resolution susceptibility imaging, can solve the problems of untrue magnetic information on the surface of samples, complex winding coil technology, and influence

Inactive Publication Date: 2005-01-05
SHANDONG UNIV
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the needle tip is very small, winding the coil on the needle tip is technically very complicated, and the magnetic field generated by the small coil is likely to affect the magnetic properties of the sample surface, making the obtained magnetic information on the sample surface untrue.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Spin polarized channel atomic force microtechnic
  • Spin polarized channel atomic force microtechnic
  • Spin polarized channel atomic force microtechnic

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] like figure 1 As shown, a conductive elastic microcantilever 6 with a magnetic tip is used. One end of the cantilever 6 is connected to the control system, and the other end is a magnetic tip 4. The control system 7 is used to control the probe 4 to approach the single crystal cobalt sample 8, the tip atoms and the surface of the sample 8 The atomic force generated between the atoms makes the micro-cantilever 6 bend, the laser 3 shines on the smooth back of the cantilever and then reflects to the detector 2, and the laser feedback system 1 is used to detect the deformation of the micro-probe cantilever 6 and feed back to the control system 7, the control system 7 Control the deformation of the microprobe cantilever 6 to be constant during the scanning process, and the control system 7 records the position coordinates of the probe 4 during the scanning process to obtain the surface morphology of the single crystal cobalt sample 8; at the same time, apply a Constant bias ...

Embodiment 2

[0029] like figure 1 As shown, the control system 7 is used to control the probe 4 to approach the single crystal cobalt sample 8, and the laser feedback system 1 is used to detect the deformation of the microprobe cantilever 6 and feed back to the control system 7. The control system 7 controls the microprobe cantilever during the scanning process. The deformation of 6 is constant, and the control system 7 records the position coordinates of the probe 4 during the scanning process to obtain the surface morphology of the single crystal cobalt sample 8; at the same time, a constant bias voltage (0.2 volts) 10 is applied to the single crystal cobalt sample 8 , apply a small alternating voltage (±20mV)10 on the basis of a constant bias voltage, record the ratio ΔI / ΔU of the tunnel current change to the voltage change when the needle tip scans at different positions on the sample surface, and obtain single crystal cobalt samples at the same time8 Surface susceptibility images.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention is an automatic rotating polarization tunnel atom force micro technology, which belongs to ultrahigh resolution magnetism sensitive imaging technology field. It uses conductive elastic micro suspending arm with magnetic pin, one end of the suspending arm is connected to the control system, another end is the magnetic pin, the control system controls the probe to approach the sample, the pin atom and the sample surface atom generate the atom force to bend the suspending arm, the laser radiates on the suspending arm surface and then reflected to the detector, and it is feed back to the control system, the three-dimension image of the sample surface can be acquired through recording the position coordinate x, y, and z of the probe in scanning process. A constant polarization is added on the sample, measures the current change in the total tunnel, records the plane position coordinate (x, y) and the correspondent total tunnel current value, and acquires the sample magnetism sensitivity information imaging.

Description

technical field [0001] The invention relates to a spin-polarized tunnel atomic force microscopy technique, which belongs to the technical field of ultra-high resolution magnetic sensitivity imaging. Background technique [0002] The scanning tunneling microscope invented by Binney and Rohrer in the early 1980s was a revolution in surface science. See Binni et al., Scanning Tunneling Microscopy, Acta Physica Swiss, Vol. 55, 1982 (G. Binnigand H. Rohrer, Helv, Scanning Tunneling Microscopy,. Phys. Acta 55, (1982)); Binni et al., with Surface Studies by Scanning Tunneling Microscopy, Phys. Letters Reviews, Vol. 49, pp. 57, 1982 (G. Binnig, et al, Surface Studies by Scanning Tunneling Microscopy, Phys. Rev. Lett. 49, 57 (1982)); in 7×7 Reconstruction on Si(111) Resolved in Real Space, Binnig et al., Review of Physics Letters, Volume 50, Page 120, 1983 (7×7 Reconstruction on Si(111) Resolved in Real Space, G.Binnig, et al. al, Phys.Rev.Lett.50, 120 (1983)); Binnig et al., Scann...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01Q60/40
Inventor 韩圣浩庞智勇
Owner SHANDONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products